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BAP55LX 数据表(PDF) 2 Page - NXP Semiconductors |
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BAP55LX 数据表(HTML) 2 Page - NXP Semiconductors |
2 / 8 page BAP55LX_1 © NXP B.V. 2007. All rights reserved. Product data sheet Rev. 01 — 30 July 2007 2 of 8 NXP Semiconductors BAP55LX Silicon PIN diode 4. Marking 5. Limiting values 6. Thermal characteristics 7. Characteristics Table 3. Marking Type number Marking code BAP55LX LC Table 4. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit VR reverse voltage - 50 V IF forward current - 100 mA Ptot total power dissipation Tsp = 90 °C - 135 mW Tstg storage temperature −65 +150 °C Tj junction temperature −65 +150 °C Table 5. Thermal characteristics Symbol Parameter Conditions Typ Unit Rth(j-sp) thermal resistance from junction to solder point 78 K/W Table 6. Characteristics Tamb = 25 °C unless otherwise specified. Symbol Parameter Conditions Min Typ Max Unit VF forward voltage IF = 50 mA - 0.95 1.1 V IR reverse current VR =20V - - 10 nA VR = 50 V - - 100 nA Cd diode capacitance see Figure 1; f = 1 MHz; VR = 0 V - 0.28 - pF VR = 1 V - 0.23 - pF VR = 20 V - 0.18 0.28 pF rD diode forward resistance see Figure 2; f = 100 MHz; IF = 0.5 mA - 3.3 4.5 Ω IF = 1 mA - 2.2 3.3 Ω IF = 10 mA - 0.8 1.2 Ω IF = 100 mA - 0.5 0.8 Ω |
类似零件编号 - BAP55LX |
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类似说明 - BAP55LX |
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