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ZDT617 数据表(PDF) 3 Page - Zetex Semiconductors

部件名 ZDT617
功能描述  DUAL NPN MEDIUM POWER HIGH GAIN TRANSISTORS
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制造商  ZETEX [Zetex Semiconductors]
网页  http://www.diodes.com/
标志 ZETEX - Zetex Semiconductors

ZDT617 数据表(HTML) 3 Page - Zetex Semiconductors

  ZDT617 Datasheet HTML 1Page - Zetex Semiconductors ZDT617 Datasheet HTML 2Page - Zetex Semiconductors ZDT617 Datasheet HTML 3Page - Zetex Semiconductors  
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ELECTRICAL CHARACTERISTICS (at Tamb= 25°C unless otherwise stated).
PARAMETER
SYMBOL
MIN.
TYP.
MAX. UNIT CONDITIONS.
Collector-Base
Breakdown Voltage
V(BR)CBO
15
70
V
IC=100µA
Collector-Emitter
Breakdown Voltage
V(BR)CEO
15
18
V
IC=10mA*
Emitter-Base
Breakdown Voltage
V(BR)EBO
58.2
V
IE=100µA
Collector Cutoff
Current
ICBO
100
nA
VCB=10V
Emitter Cutoff
Current
IEBO
100
nA
VEB=4V
Collector-Emitter
Cutoff Current
ICES
100
nA
VCES=10V
Collector-Emitter
Saturation Voltage
VCE(sat)
8
70
150
14
100
200
mV
mV
mV
IC=0.1A, IB=10mA*
IC=1A, IB=10mA*
IC=3A, IB=50mA*
Base-Emitter
Saturation Voltage
VBE(sat)
0.9
1.0
V
IC=3A, IB=50mA*
Base-Emitter
Turn-On Voltage
VBE(on)
0.84
1.0
V
IC=3A, VCE=2V*
Static Forward
Current Transfer
Ratio
hFE
200
300
200
150
415
450
320
240
80
IC=10mA, VCE=2V*
IC=200mA, VCE=2V*
IC=3A, VCE=2V*
IC=5A, VCE=2V*
IC=12A, VCE=2V*
Transition
Frequency
fT
80
120
MHz
IC=50mA, VCE=10V
f=100MHz
Output Capacitance Cobo
30
40
pF
VCB=10V, f=1MHz
Turn-On Time
ton
120
ns
VCC=10V, IC=3A
IB1=IB2=50mA
Turn-Off Time
toff
160
ns
*Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤ 2%
ZDT617
ZDT617
3 - 328
3 - 329


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