74LVC595ABQ datasheet(9/19 Pages) NXP

部件名	74LVC595ABQ

功能描述	8-bit serial-in/serial-out or parallel-out shift register; 3-state

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制造商	NXP [NXP Semiconductors]

网页	http://www.nxp.com

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9 / 19 page

74LVC595A_1

Product data sheet

Rev. 01 — 29 May 2007

9 of 19

NXP Semiconductors

74LVC595A

8-bit serial-in/serial-out or parallel-out shift register; 3-state

[1]

Typical values are measured at Tamb =25 °C and VCC = 1.8 V, 2.5 V, 2.7 V, and 3.3 V respectively.

[2]

tpd is the same as tPLH and tPHL.

[3]

ten is the same as tPZH and tPZL.

[4]

tdis is the same as tPHZ and tPLZ.

[5]

Skew between any two outputs of the same package switching in the same direction. This parameter is guaranteed by design.

[6]

CPD is used to determine the dynamic power dissipation (PD in µW).

PD =CPD × VCC2 × fi × N+ ∑(CL × VCC2 × fo) where:

fi = input frequency in MHz;

fo = output frequency in MHz;

CL = output load capacitance in pF;

VCC = supply voltage in V;

N = number of inputs switching;

∑(C

L × VCC

2

× f

o) = sum of outputs.

th

hold time

DS to SHCP; see Figure 9

VCC = 1.65 V to 1.95 V

1.5

0.2

-

2.0

-

ns

VCC = 2.3 V to 2.7 V

1.5

0.1

-

2.0

-

ns

VCC = 2.7 V

1.5

−0.1

-

2.0

-

ns

VCC = 3.0 V to 3.6 V

1.0

−0.2

-

1.5

-

ns

trec

recovery time

MR to SHCP; see Figure 11

VCC = 1.65 V to 1.95 V

5.0

−2.7

-

5.5

-

ns

VCC = 2.3 V to 2.7 V

4.0

−1.5

-

4.5

-

ns

VCC = 2.7 V

2.0

−1.0

-

2.5

-

ns

VCC = 3.0 V to 3.6 V

2.0

−1.0

-

2.5

-

ns

fmax

maximum

frequency

SHCP or STCP; see Figure 7

and Figure 8

VCC = 1.65 V to 1.95 V

80

130

-

70

-

MHz

VCC = 2.3 V to 2.7 V

100

140

-

90

-

MHz

VCC = 2.7 V

110

150

-

100

-

MHz

VCC = 3.0 V to 3.6 V

130

180

-

115

-

MHz

tsk(o)

output skew time

VCC = 3.0 V to 3.6 V

[5]

-

1.0

-

1.5

ns

CPD

power dissipation

capacitance

VI = GND to VCC

[6]

VCC = 1.65 V to 1.95 V

-

50

-

pF

VCC = 2.3 V to 2.7 V

-

45

-

pF

VCC = 3.0 V to 3.6 V

-

44

-

pF

Table 7.

Dynamic characteristics …continued

Voltages are referenced to GND (ground = 0 V). For test circuit see Figure 13.

Symbol Parameter

Conditions

−40 °C to +85 °C

−40 °C to +125 °C Unit

Min

Typ[1]

Max

Min

Max

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