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74HCT253D 数据表(PDF) 8 Page - NXP Semiconductors |
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74HCT253D 数据表(HTML) 8 Page - NXP Semiconductors |
8 / 17 page 74HC_HCT253_3 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2010. All rights reserved. Product data sheet Rev. 03 — 22 April 2010 8 of 17 NXP Semiconductors 74HC253; 74HCT253 Dual 4-input multiplexer; 3-state [1] tpd is the same as tPHL, tPLH. [2] ten is the same as tPZH, tPZL. [3] tdis is the same as tPHZ, tPLZ. [4] tt is the same as tTHL, tTLH. [5] CPD is used to determine the dynamic power dissipation (PD in μW). PD =CPD × VCC2 × fi × N+ ∑(CL × VCC2 × fo) where: fi = input frequency in MHz; fo = output frequency in MHz; CL = output load capacitance in pF; VCC = supply voltage in V; N = number of inputs switching; ∑(C L × VCC 2 × f o) = sum of outputs. tt transition time see Figure 6 [4] VCC = 2.0 V 14 60 75 90 ns VCC = 4.5 V 5 12 15 18 ns VCC = 6.0 V 4 10 13 15 ns CPD power dissipation capacitance per multiplexer; VI =GND to VCC [5] 55 - pF 74HCT253 tpd propagation delay 1ln to 1Y or 2ln to 2Y; see Figure 6 [1] VCC = 4.5 V 20 38 48 57 ns VCC = 5.0 V; CL = 15 pF 17 - - ns Sn to nY; see Figure 6 VCC = 4.5 V 22 40 50 60 ns VCC = 5.0 V; CL = 15 pF 19 - ns ten enable time nOE to nY; VCC = 4.5 V; see Figure 7 [2] 14 30 38 45 ns tdis disable time nOE to nY; VCC =4.5 V; see Figure 7 [3] 13 30 38 45 ns tt transition time VCC = 4.5 V; see Figure 6 512 15 18 ns CPD power dissipation capacitance per multiplexer; VI =GND to VCC [5] 55 - pF Table 7. Dynamic characteristics …continued Voltages are referenced to GND (ground = 0 V); For test circuit see Figure 8. Symbol Parameter Conditions 25 °C −40 °C to +85 °C −40 °C to +125 °C Unit Typ Max Max Max |
类似零件编号 - 74HCT253D |
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类似说明 - 74HCT253D |
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