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74AUP1G885GD 数据表(PDF) 4 Page - NXP Semiconductors |
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74AUP1G885GD 数据表(HTML) 4 Page - NXP Semiconductors |
4 / 19 page 74AUP1G885_5 © NXP B.V. 2009. All rights reserved. Product data sheet Rev. 05 — 26 June 2009 4 of 19 NXP Semiconductors 74AUP1G885 Low-power dual function gate 7. Functional description [1] H = HIGH voltage level; L = LOW voltage level. 8. Limiting values [1] The minimum input and output voltage ratings may be exceeded if the input and output current ratings are observed. [2] For VSSOP8 packages: above 110 °C the value of P tot derates linearly with 8.0 mW/K. For XSON8, XSON8U and XQFN8U packages: above 118 °C the value of P tot derates linearly with 7.8 mW/K. Table 4. Function table[1] Input Output A B C 1Y 2Y LLLLL H LLLH LH LLH H H LLH LLH LL HL HHL L HHL H HHHHL Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Voltages are referenced to GND (ground = 0 V). Symbol Parameter Conditions Min Max Unit VCC supply voltage −0.5 +4.6 V IIK input clamping current VI <0V −50 - mA VI input voltage [1] −0.5 +4.6 V IOK output clamping current VO <0V −50 - mA VO output voltage Active mode and Power-down mode [1] −0.5 +4.6 V IO output current VO =0 VtoVCC - ±20 mA ICC supply current - 50 mA IGND ground current −50 - mA Tstg storage temperature −65 +150 °C Ptot total power dissipation Tamb = −40 °C to +125 °C [2] - 250 mW |
类似零件编号 - 74AUP1G885GD |
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类似说明 - 74AUP1G885GD |
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