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74AUP1G80GM 数据表(PDF) 1 Page - NXP Semiconductors |
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74AUP1G80GM 数据表(HTML) 1 Page - NXP Semiconductors |
1 / 18 page 1. General description The 74AUP1G80 is a high-performance, low-power, low-voltage, Si-gate CMOS device, superior to most advanced CMOS compatible TTL families. Schmitt trigger action at all inputs makes the circuit tolerant to slower input rise and fall times across the entire VCC range from 0.8 V to 3.6 V. This device ensures a very low static and dynamic power consumption across the entire VCC range from 0.8 V to 3.6 V. This device is fully specified for partial Power-down applications using IOFF. The IOFF circuitry disables the output, preventing the damaging backflow current through the device when it is powered down. The 74AUP1G80 provides the single positive-edge triggered D-type flip-flop. Information on the data input is transferred to the Q output on the LOW-to-HIGH transition of the clock pulse. The input pin D must be stable one set-up time prior to the LOW-to-HIGH clock transition for predictable operation. 2. Features I Wide supply voltage range from 0.8 V to 3.6 V I High noise immunity I Complies with JEDEC standards: N JESD8-12 (0.8 V to 1.3 V) N JESD8-11 (0.9 V to 1.65 V) N JESD8-7 (1.2 V to 1.95 V) N JESD8-5 (1.8 V to 2.7 V) N JESD8-B (2.7 V to 3.6 V) I ESD protection: N HBM JESD22-A114-D exceeds 5000 V N MM JESD22-A115-A exceeds 200 V N CDM JESD22-C101-C exceeds 1000 V I Low static power consumption; ICC = 0.9 µA (maximum) I Latch-up performance exceeds 100 mA per JESD 78 Class II I Inputs accept voltages up to 3.6 V I Low noise overshoot and undershoot < 10 % of VCC I IOFF circuitry provides partial Power-down mode operation I Multiple package options I Specified from −40 °Cto+85 °C and −40 °C to +125 °C 74AUP1G80 Low-power D-type flip-flop; positive-edge trigger Rev. 01 — 20 October 2006 Product data sheet |
类似零件编号 - 74AUP1G80GM |
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类似说明 - 74AUP1G80GM |
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