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1N5381A 数据表(PDF) 1 Page - EIC discrete Semiconductors

部件名 1N5381A
功能描述  SILICON ZENER DIODES
Download  3 Pages
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制造商  EIC [EIC discrete Semiconductors]
网页  http://www.eicsemi.com
标志 EIC - EIC discrete Semiconductors

1N5381A 数据表(HTML) 1 Page - EIC discrete Semiconductors

  1N5381A Datasheet HTML 1Page - EIC discrete Semiconductors 1N5381A Datasheet HTML 2Page - EIC discrete Semiconductors 1N5381A Datasheet HTML 3Page - EIC discrete Semiconductors  
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1N5338A - 1N5388A
SILICON ZENER DIODES
VZ : 5.1 - 200 Volts
PD : 5 Watts
FEATURES :
* Complete Voltage Range 5.1 to 200 Volts
* High peak reverse power dissipation
* High reliability
* Low leakage current
* Pb / RoHS Free
MECHANICAL DATA :
* Case : DO-15 Molded plastic
* Epoxy : UL94V-0 rate flame retardant
* Lead : Axial lead solderable per MIL-STD-202,
Method 208 guaranteed
* Polarity : Color band denotes cathode end
* Mounting position : Any
* Weight : 0.4 gram
MAXIMUM RATINGS
Rating at 25
°C ambient temperature unless otherwise specified.
Rating
Symbol
Value
Unit
DC Power Dissipation at TL = 75 °C (Note1)
PD
5.0
Watts
Maximum Forward Voltage at IF = 1 A
VF
1.2
Volts
Operating Junction Temperature Range
TJ
- 65 to + 200
°C
Storage Temperature Range
TSTG
- 65 to + 200
°C
Note :
(1) TL = Lead temperature at 3/8 " (9.5mm) from body.
TL, LEAD TEMPERATURE (°C)
LEAD LENGTH TO HEATSINK(INCH)
Page 1 of 3
Rev. 10 : March 9, 2010
DO-15
Dimensions in inches and ( millimeters )
0.300 (7.6)
0.230 (5.8)
0.142 (3.6)
0.102 (2.6)
0.034 (0.86)
0.028 (0.71)
1.00 (25.4)
MIN.
1.00 (25.4)
MIN.
1
2
3
4
5
L = 3/8" (9.5mm)
Fig. 1 POWER TEMPERATURE DERATING CURVE
0
0
25
50
75
100
125
150
175
200
Fig. 2 TYPICAL THERMAL RESISTANCE
0
10
20
30
40
50
0
0.2
0.4
0.6
0.8
1.0
IATF 0060636
SGS TH07/1033
TH09/2479
TH97/2478


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