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SSM2313GN 数据表(PDF) 4 Page - Silicon Standard Corp.

部件名 SSM2313GN
功能描述  P-channel Enhancement-mode Power MOSFET
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制造商  SSC [Silicon Standard Corp.]
网页  http://www.siliconstandard.com
标志 SSC - Silicon Standard Corp.

SSM2313GN 数据表(HTML) 4 Page - Silicon Standard Corp.

  SSM2313GN Datasheet HTML 1Page - Silicon Standard Corp. SSM2313GN Datasheet HTML 2Page - Silicon Standard Corp. SSM2313GN Datasheet HTML 3Page - Silicon Standard Corp. SSM2313GN Datasheet HTML 4Page - Silicon Standard Corp. SSM2313GN Datasheet HTML 5Page - Silicon Standard Corp.  
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SSM2313GN
4/16/2005 Rev.2.1
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
Fig 9. Maximum Safe Operating Area
Fig 10. Effective Transient Thermal Impedance
Fig 11. Switching Time Circuit
Fig 12. Gate Charge Circuit
td(on) tr
td(off)tf
VDS
VGS
10%
90%
Q
VG
-4.5V
QGS
QGD
QG
Charge
0
2
4
6
8
10
02468
Q G , Total Gate Charge (nC)
I D =- 2 A
V DS =-16V
10
100
1000
1
5
9
13
17
21
25
-V DS , Drain-to-Source Voltage (V)
f=1.0MHz
C iss
C oss
C rss
0.001
0.01
0.1
1
0.0001
0.001
0.01
0.1
1
10
100
1000
t , Pulse Width (s)
0.01
0.05
0.1
0.2
Duty factor=0.5
Single Pulse
PDM
Duty factor = t/T
Peak Tj = PDM x Rthja + Ta
R Θja = 270°C/W
T
0.01
0.1
1
10
100
0.1
1
10
100
-V DS , Drain-to-Source Voltage (V)
T A =25
o C
Single Pulse
1ms
10ms
100ms
1s
DC
t


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