SSM2301N datasheet(5/6 Pages) SSC | P-CHANNEL ENHANCEMENT-MODE POWER MOSFET

部件名	SSM2301N

功能描述	P-CHANNEL ENHANCEMENT-MODE POWER MOSFET

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制造商	SSC [Silicon Standard Corp.]

网页	http://www.siliconstandard.com

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SSM2301N

Fig 9. Gate Charge Characteristics

Fig 10. Typical Capacitance Characteristics

Fig 11. Forward Characteristic of

Fig 12. Gate Threshold Voltage vs.

Reverse Diode

Junction Temperature

0

1

2

3

4

5

02

4

68

Q G , Total Gate Charge (nC)

I D =-2.8A

V DS =-6V

10

100

1000

1

4

7

10

13

-V DS (V)

f=1.0MHz

Ciss

Coss

Crss

0

1

10

0.1

0.3

0.5

0.7

0.9

1.1

1.3

-V SD (V)

T j =25

o C

T j =150

o C

0.4

0.6

0.8

1

1.2

-50

0

50

100

150

T j , Junction Temperature (

o C)

Rev.2.02 3/11/2004

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