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SSM2301N 数据表(PDF) 4 Page - Silicon Standard Corp.

部件名 SSM2301N
功能描述  P-CHANNEL ENHANCEMENT-MODE POWER MOSFET
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制造商  SSC [Silicon Standard Corp.]
网页  http://www.siliconstandard.com
标志 SSC - Silicon Standard Corp.

SSM2301N 数据表(HTML) 4 Page - Silicon Standard Corp.

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SSM2301N
Fig 5. Maximum Drain Current vs.
Fig 6. Typical Power Dissipation
Case Temperature
Fig 7. Maximum Safe Operating Area
Fig 8. Effective Transient Thermal Impedance
0
1
10
100
0.1
1
10
100
-V DS (V)
1ms
10ms
1s
100ms
T C =25 °C
Single Pulse
0.01
0.1
1
0.0001
0.001
0.01
0.1
1
10
100
t , Pulse Width (s)
PDM
t
T
Duty Factor = 0.5
0.2
0.1
0.05
0.02
Single Pulse
Duty Factor = t/T
Peak Tj = P DM x Rthja + Ta
0
0.5
1
1.5
2
2.5
3
25
50
75
100
125
150
T c , Case Temperature (
o C)
0
0.3
0.6
0.9
1.2
1.5
0
30
60
90
120
150
T c , Case Temperature (
o C)
Rev.2.02 3/11/2004


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