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SSM2301N 数据表(PDF) 2 Page - Silicon Standard Corp. |
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SSM2301N 数据表(HTML) 2 Page - Silicon Standard Corp. |
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2 / 6 page  www.SiliconStandard.com 2 of 6 SSM2301N Electrical Characteristics @ Tj=25 oC (unless otherwise specified) Symbol Parameter Test Conditions Min. Typ. Max. Units BVDSS Drain-Source Breakdown Voltage VGS=0V, ID=-250uA -20 - - V ∆BV DSS/∆T j Breakdown Voltage Temperature Coefficient Reference to 25°C, ID=-1mA - -0.1 - V/°C RDS(ON) Static Drain-Source On-Resistance VGS=-5V, ID=-2.8A - - 130 m Ω VGS=-2.8V, ID=-2.0A - - 190 m Ω VGS(th) Gate Threshold Voltage VDS=VGS, ID=-250uA -0.5 - - V gfs Forward Transconductance VDS=-5V, ID=-2.8A - 4.4 - S IDSS Drain-Source Leakage Current (Tj=25 oC) VDS=-20V, VGS=0V - - -1 uA Drain-Source Leakage Current (Tj=55 oC) VDS=-16V, VGS=0V - - -10 uA IGSS Gate-Source Leakage VGS=- - nA Qg Total Gate Charge 2 ID=-2.8A - 5.2 - nC Qgs Gate-Source Charge VDS=-6V - 1.36 - nC Qgd Gate-Drain ("Miller") Charge VGS=-5V - 0.6 - nC td(on) Turn-on Delay Time 2 VDS=-6V - 25 - ns tr Rise Time ID=-1A - 60 - ns td(off) Turn-off Delay Time RG=6Ω ,VGS=-5V - 70 - ns tf Fall Time RD=6Ω -60 - ns Ciss Input Capacitance VGS=0V - 295 - pF Coss Output Capacitance VDS=-6V - 170 - pF Crss Reverse Transfer Capacitance f=1.0MHz - 65 - pF Source-Drain Diode Symbol Parameter Test Conditions Min. Typ. Max. Units IS Continuous Source Current ( Body Diode ) VD=VG=0V , VS=-1.2V - - -1.6 A ISM Pulsed Source Current ( Body Diode ) 1 - - -10 A VSD Forward On Voltage 2 Tj=25°C, IS=-1.6A, VGS=0V - - -1.2 V Notes: 1.Pulse width limited by Max. junction temperature. 2.Pulse width <300us , duty cycle <2%. 3.Surface mounted on FR4 board, t < 5 sec. ± 8V ±100 Rev.2.02 3/11/2004 |
类似零件编号 - SSM2301N |
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类似说明 - SSM2301N |
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