IRF8513TRPbF datasheet(8/11 Pages) IRF

部件名	IRF8513TRPbF

功能描述	HEXFET Power MOSFET

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制造商	IRF [International Rectifier]

网页	http://www.irf.com

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IRF8513PbF

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Fig 30a. Switching Time Test Circuit

Fig 30b. Switching Time Waveforms

Fig 29b. Unclamped Inductive Waveforms

Fig 29a. Unclamped Inductive Test Circuit

tp

V(BR)DSS

IAS

RG

IAS

0.01

Ω

tp

D.U.T

L

VDS

+

- VDD

DRIVER

A

15V

20V

VGS

Fig 31a. Gate Charge Test Circuit

Fig 31b. Gate Charge Waveform

Fig 28.

Peak Diode Recovery dv/dt Test Circuit for N-Channel

HEXFET® Power MOSFETs

Circuit Layout Considerations

• Low Stray Inductance

• Ground Plane

• Low Leakage Inductance

Current Transformer

P.W.

Period

di/dt

Diode Recovery

dv/dt

Ripple

≤ 5%

Body Diode

Forward Drop

Re-Applied

Voltage

Reverse

Recovery

Current

Body Diode Forward

Current

VGS=10V

VDD

ISD

Driver Gate Drive

D.U.T. ISD Waveform

D.U.T. VDS Waveform

Inductor Curent

D =

P.W.

Period

* VGS = 5V for Logic Level Devices

*

+

-

+

-

RG

VDD

• dv/dt controlled by RG

• Driver same type as D.U.T.

• ISD controlled by Duty Factor "D"

• D.U.T. - Device Under Test

D.U.T

Inductor Current

VDS

Pulse Width ≤ 1 µs

Duty Factor ≤ 0.1 %

RD

VGS

RG

D.U.T.

VGS

+

-VDD

VDS

90%

10%

VGS

td(on)

tr

td(off) tf

1K

VCC

DUT

0

L

S

20K

Vds

Vgs

Id

Vgs(th)

Qgs1

Qgs2

Qgd

Qgodr

类似零件编号 - IRF8513TRPbF

制造商	部件名	数据表	功能描述
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Intersil Corporation	IRF850	56Kb / 7P	4.5A, 500V, 1.500 Ohm, N-Channel Power MOSFET
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New Jersey Semi-Conduct...	IRF850	122Kb / 3P	N-Channel Power MOSFETs, 4.5 A, 450 V/500 V

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类似说明 - IRF8513TRPbF

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