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RZE002P02 Datasheet(数据表) 1 Page - Rohm

部件型号  RZE002P02
说明  1.2V Drive Pch MOSFET
下载  5 Pages
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制造商  ROHM [Rohm]
网页  http://www.rohm.com
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2009 ROHM Co., Ltd. All rights reserved.
2009.06 - Rev.A
1.2V Drive Pch MOSFET
RZE002P02
Structure
Dimensions (Unit : mm)
Silicon P-channel MOSFET
Features
1) High speed switching.
2) Small package (EMT3).
3) 1.2V drive.
Applications
Switching
Package specifications
Inner circuit
Package
Code
Taping
Basic ordering unit (pieces)
RZE002P02
TL
3000
Type
Absolute maximum ratings (Ta=25
°C)
∗1
∗1
Parameter
V
VDSS
Symbol
V
VGSS
mA
ID
mA
IDP
IS
ISP
Limits
Unit
Drain-source voltage
Gate-source voltage
Drain current
Souce current
(Body diode)
Continuous
Pulsed
Continuous
Pulsed
mA
mA
∗1 Pw≤10µs, Duty cycle≤1%
∗2 Each terminal mounted on a recommended land
−20
±10
±200
±800
∗2
PD
°C
Tch
°C
Tstg
Total power dissipation
Channel temperature
Range of storage temperature
150
−55 to +150
−800
mW
150
−100
Thermal resistance
Parameter
°C/W
Rth(ch-a)
Symbol
Limits
Unit
Channel to ambient
833
∗ Each terminal mounted on a recommended land
(1) Source
(2) Gate
(3) Drain
∗1 ESD PROTECTION DIODE
∗2 BODY DIODE
∗2
∗1
(3)
(2)
(1)
(1)Source
(2)Gate
(3)Drain
EMT3
1.6
0.7
0.15
0.55
0.2
1.0
0.3
(2)
0.5
0.5
(3)
0.2
(1)
Abbreviated symbol : YK




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