HY5S5B6GLF-H datasheet(52/52 Pages) HYNIX

部件名	HY5S5B6GLF-H

功能描述	256Mbit (16Mx16bit) Mobile SDR Memory

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制造商	HYNIX [Hynix Semiconductor]

网页	http://www.skhynix.com/kor/main.do

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52 / 52 page

Rev 1.0 / Apr. 2006

52

11

256Mbit (16Mx16bit) Mobile SDR Memory

HY5S5B6GLF(P)-xE Series

PACKAGE INFORMATION

54 Ball FBGA 0.8mm pitch (Size 8.0mm x 10.0mm, t=1.0mm max)

Unit

[mm]

0.80

Bottom

View

0.34

+/- 0.05

0.80 Typ.

0.40

0.80

Typ.

1.00 max

3.20

1.60

0.45

+/- 0.05

A1 INDEX MARK

1.375

10.0

Typ.

1.80

8.00 Typ.

类似零件编号 - HY5S5B6GLF-H

制造商	部件名	数据表	功能描述
Hynix Semiconductor	HY5S5B6ELF-HE	245Kb / 27P	256MBit MOBILE SDR SDRAMs based on 4M x 4Bank x16 I/O
	HY5S5B6ELF-SE	245Kb / 27P	256MBit MOBILE SDR SDRAMs based on 4M x 4Bank x16 I/O
	HY5S5B6ELFP-HE	245Kb / 27P	256MBit MOBILE SDR SDRAMs based on 4M x 4Bank x16 I/O
	HY5S5B6ELFP-SE	245Kb / 27P	256MBit MOBILE SDR SDRAMs based on 4M x 4Bank x16 I/O

制造商	部件名	数据表	功能描述
Hynix Semiconductor	HY27US08561M	733Kb / 44P	256Mbit (32Mx8bit / 16Mx16bit) NAND Flash
	HY27SS08561A	428Kb / 47P	256Mbit (32Mx8bit / 16Mx16bit) NAND Flash
	H55S2622JFR-60M	1Mb / 55P	256MBit MOBILE SDR SDRAMs based on 2M x 4Bank x32 I/O
	HY5S5B6ELF-HE	245Kb / 27P	256MBit MOBILE SDR SDRAMs based on 4M x 4Bank x16 I/O
	H55S2562JFR-60M	689Kb / 52P	256MBit MOBILE SDR SDRAM based on 4M x 4Bank x16 I/O
Infineon Technologies A...	HYB25L256160AF	1Mb / 56P	256MBit Mobile-RAM Rev. 1.2, April 2004
Hynix Semiconductor	H5MS2562JFR-E3M	1Mb / 62P	256Mb (16Mx16bit) Mobile DDR SDRAM
Qimonda AG	HYB18L512320BF-7.5	991Kb / 23P	DRAMs for Mobile Applications 512-Mbit SDR Mobile-RAM
Fujitsu Component Limit...	MB82DBS16164A-80L	35Kb / 1P	256 Mbit Mobile FCRAM 1.8 V, SDR Burst Mode
List of Unclassifed Man...	V55C2256164VB	560Kb / 46P	256Mbit MOBILE SDRAM 2.5 VOLT FBGA PACKAGE 16M X 16