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HY5PS121621CFP-S6I 数据表(PDF) 20 Page - Hynix Semiconductor

部件名 HY5PS121621CFP-S6I
功能描述  512Mb DDR2 SDRAM
Download  38 Pages
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制造商  HYNIX [Hynix Semiconductor]
网页  http://www.skhynix.com/kor/main.do
标志 HYNIX - Hynix Semiconductor

HY5PS121621CFP-S6I 数据表(HTML) 20 Page - Hynix Semiconductor

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Rev. 0.8 / Oct. 2007
20
1HY5PS12421C(L)FP-xI
1HY5PS12821C(L)FP-xI
1HY5PS121621C(L)FP-xI
3.5. Input/Output Capacitance
4. Electrical Characteristics & AC Timing Specification
( -40 ℃ ≤ TCASE ≤ 85℃; VDDQ = 1.8 V +/- 0.1V; VDD = 1.8V +/- 0.1V)
Refresh Parameters by Device Density
DDR2 SDRAM speed bins and tRCD, tRP and tRC for corresponding bin
Parameter
Symbol
DDR2- 400
DDR2- 533
DDR2 667
DDR2 800
Units
Min
Max
Min
Max
Min
Max
Input capacitance, CK and CK
CCK
1.0
2.0
1.0
2.0
1.0
2.0
pF
Input capacitance delta, CK and CK
CDCK
x
0.25
x
0.25
x
0.25
pF
Input capacitance, all other input-only pins
CI
1.0
2.0
1.0
2.0
1.0
1.75
pF
Input capacitance delta, all other input-only pins
CDI
x
0.25
x
0.25
x
0.25
pF
Input/output capacitance, DQ, DM, DQS, DQS
CIO
2.5
4.0
2.5
3.5
2.5
3.5
pF
Input/output capacitance delta, DQ, DM, DQS, DQS
CDIO
x
0.5
x
0.5
x
0.5
pF
Parameter
Symbol
256Mb 512Mb 1Gb
2Gb
4Gb
Units
Refresh to Active
/Refresh command time
tRFC
75
105
127.5
195
327.5
ns
Average periodic refresh interval
tREFI -40 ℃≤ TCASE ≤ 85℃
7.8
7.8
7.8
7.8
7.8
us
Speed
DDR2-800D
DDR2-800E
DDR2-667D
DDR2-533C
DDR2-400B
Units
Bin(CL-tRCD-tRP)
5-5-5
6-6-6
5-5-5
4-4-4
3-3-3
Parameter
min
min
min
min
min
CAS Latency
56
5
4
5
tCK
tRCD
12.5
15
15
15
15
ns
tRP
12.5
15
15
15
15
ns
tRAS
45
45
45
45
40
ns
tRC
57.25
60
606055
ns


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