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HY5PS121621CFP-S6I 数据表(PDF) 17 Page - Hynix Semiconductor

部件名 HY5PS121621CFP-S6I
功能描述  512Mb DDR2 SDRAM
Download  38 Pages
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制造商  HYNIX [Hynix Semiconductor]
网页  http://www.skhynix.com/kor/main.do
标志 HYNIX - Hynix Semiconductor

HY5PS121621CFP-S6I 数据表(HTML) 17 Page - Hynix Semiconductor

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Rev. 0.8 / Oct. 2007
17
1HY5PS12421C(L)FP-xI
1HY5PS12821C(L)FP-xI
1HY5PS121621C(L)FP-xI
IDD Test Conditions
(IDD values are for full operating range of Voltage and Temperature, Notes 1-5)
Symbol
Conditions
Units
IDD0
Operating one bank active-precharge current; tCK = tCK(IDD), tRC = tRC(IDD), tRAS =
tRAS min(IDD) ; CKE is HIGH, CS is HIGH between valid commands;Address bus inputs are
SWITCHING;Data bus inputs are SWITCHING
mA
IDD1
Operating one bank active-read-precharge current ; IOUT = 0mA;BL = 4, CL = CL(IDD), AL
= 0; tCK = tCK(IDD), tRC = tRC (IDD), tRAS = tRASmin(IDD), tRCD = tRCD(IDD) ; CKE is HIGH,
CS is HIGH between valid commands ; Address bus inputs are SWITCHING ; Data pattern is same
as IDD4W
mA
IDD2P
Precharge power-down current ; All banks idle ; tCK = tCK(IDD) ; CKE is LOW ; Other control
and address bus inputs are STABLE; Data bus inputs are FLOATING
mA
IDD2Q
Precharge quiet standby current ; All banks idle; tCK = tCK(IDD);CKE is HIGH, CS is HIGH;
Other control and address bus inputs are STABLE; Data bus inputs are FLOATING
mA
IDD2N
Precharge standby current; All banks idle; tCK = tCK(IDD); CKE is HIGH, CS is HIGH; Other
control and address bus inputs are SWITCHING; Data bus inputs are SWITCHING
mA
IDD3P
Active power-down current; All banks open; tCK = tCK(IDD);
CKE is LOW; Other control and address bus inputs are STABLE;
Data bus inputs are FLOATING
Fast PDN Exit MRS(12) = 0
mA
Slow PDN Exit MRS(12) = 1
mA
IDD3N
Active standby current; All banks open; tCK = tCK(IDD), tRAS = tRASmax(IDD), tRP
=tRP(IDD); CKE is HIGH, CS is HIGH between valid commands; Other control and address bus
inputs are SWITCHING; Data bus inputs are SWITCHING
mA
IDD4W
Operating burst write current; All banks open, Continuous burst writes; BL = 4, CL = CL(IDD),
AL = 0; tCK = tCK(IDD), tRAS = tRASmax(IDD), tRP = tRP(IDD); CKE is HIGH, CS is HIGH
between valid commands; Address bus inputs are SWITCHING; Data bus inputs are SWITCHING
mA
IDD4R
Operating burst read current; All banks open, Continuous burst reads, IOUT = 0mA; BL = 4,
CL = CL(IDD), AL = 0; tCK = tCK(IDD), tRAS = tRASmax(IDD), tRP = tRP(IDD); CKE is HIGH, CS
is HIGH between valid commands; Address bus inputs are SWITCHING;; Data pattern is same as
IDD4W
mA
IDD5B
Burst refresh current; tCK = tCK(IDD); Refresh command at every tRFC(IDD) interval; CKE is
HIGH, CS is HIGH between valid commands; Other control and address bus inputs are SWITCH-
ING; Data bus inputs are SWITCHING
mA
IDD6
Self refresh current; CK and CK at 0V; CKE £ 0.2V; Other control and address bus inputs are
FLOATING; Data bus inputs are FLOATING
mA


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