HY5S2B6DLF-SE datasheet(20/26 Pages) HYNIX

部件名	HY5S2B6DLF-SE

功能描述	4Banks x 2M x 16bits Synchronous DRAM

Download	26 Pages

Scroll/Zoom	100%

制造商	HYNIX [Hynix Semiconductor]

网页	http://www.skhynix.com/kor/main.do

标志

20 / 26 page

Rev. 0.3 / Feb. 2005

20

1HY5S2B6DLF(P)-xE

4Banks x 2M x 16bits Synchronous DRAM

DC CHARACTERISTICS II (TA= -25 to 85oC)

Note :

1. IDD1 and IDD4 depend on output loading and cycle rates. Specified values are measured with the output open

2. See the tables of next page for more specific IDD6 current values.

Parameter

Symbol

Test Condition

Speed

Unit Note

S

B

Operating Current

IDD1

Burst length=1, One bank active

tRC

≥ tRC(min), IOL=0mA

60

55

mA

1

Precharge Standby Current

in Power Down Mode

IDD2P

CKE

≤ VIL(max), tCK = 15ns

0.5

mA

IDD2PS

CKE

≤ VIL(max), tCK = ∞

0.3

mA

Precharge Standby Current

in Non Power Down Mode

IDD2N

CKE

≥ VIH(min), CS ≥ VIH(min), tCK = 15ns

Input signals are changed one time during

2clks.

All other pins

≥ VDD-0.2V or ≤ 0.2V

5.5

mA

IDD2NS

CKE

≥ VIH(min), tCK = ∞

Input signals are stable.

1

Active Standby Current

in Power Down Mode

IDD3P

CKE

≤ VIL(max), tCK = 15ns

1.5

mA

IDD3PS

CKE

≤ VIL(max), tCK = ∞

1

Active Standby Current

in Non Power Down Mode

IDD3N

CKE

≥ VIH(min), CS ≥ VIH(min), tCK = 15ns

Input signals are changed one time during

2clks.

All other pins

≥ VDD-0.2V or ≤ 0.2V

12

mA

IDD3NS

CKE

≥ VIH(min), tCK = ∞

Input signals are stable.

6

Burst Mode Operating

Current

IDD4

tCK

≥ tCK(min), IOL=0mA

All banks active

65

55

mA

1

Auto Refresh Current

IDD5

tRC

≥ tRC(min), All banks active

135

130

mA

Self Refresh Current

IDD6

CKE

≤ 0.2V

See Next Page

mA

2

Standby Current in

Deep Power Down Mode

IDD7

See p.25~26

50

uA

类似零件编号 - HY5S2B6DLF-SE

制造商	部件名	数据表	功能描述
Hynix Semiconductor	HY5S5B2BLF-6E	666Kb / 54P	256M (8Mx32bit) Mobile SDRAM
	HY5S5B2BLF-HE	666Kb / 54P	256M (8Mx32bit) Mobile SDRAM
	HY5S5B2BLF-SE	666Kb / 54P	256M (8Mx32bit) Mobile SDRAM
	HY5S5B2BLFP-6E	666Kb / 54P	256M (8Mx32bit) Mobile SDRAM
	HY5S5B2BLFP-HE	666Kb / 54P	256M (8Mx32bit) Mobile SDRAM

More results

类似说明 - HY5S2B6DLF-SE

制造商	部件名	数据表	功能描述
Hynix Semiconductor	HY5Y2B6DLF-HE	1Mb / 26P	4Banks x 2M x 16bits Synchronous DRAM
Hynix Semiconductor	HY5W2B6DLF-HE	1Mb / 26P	4Banks x 2M x 16bits Synchronous DRAM
Integrated Silicon Solu...	IS42VM16800F	465Kb / 27P	2M x 16Bits x 4Banks Mobile Synchronous DRAM
	IS42VM16800H	847Kb / 33P	2M x 16Bits x 4Banks Mobile Synchronous DRAM
	IS42SM16800G-6BLI	470Kb / 33P	2M x 16Bits x 4Banks Mobile Synchronous DRAM
	IS42SM16800H-6BLI	854Kb / 34P	2M x 16Bits x 4Banks Mobile Synchronous DRAM
Hynix Semiconductor	HY5Y6B6DLF-HF	2Mb / 27P	4Banks x1M x 16bits Synchronous DRAM
	HY5S6B6D	360Kb / 27P	4Banks x1M x 16bits Synchronous DRAM
	HY5W6B6DLF-HE	2Mb / 27P	4Banks x1M x 16bits Synchronous DRAM
Integrated Silicon Solu...	IS42VM16160E	838Kb / 33P	4M x 16Bits x 4Banks Mobile Synchronous DRAM