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HY5FS123235AFCP-09 数据表(PDF) 20 Page - Hynix Semiconductor

部件名 HY5FS123235AFCP-09
功能描述  512M (16Mx32) GDDR4 SDRAM
Download  74 Pages
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制造商  HYNIX [Hynix Semiconductor]
网页  http://www.skhynix.com/kor/main.do
标志 HYNIX - Hynix Semiconductor

HY5FS123235AFCP-09 数据表(HTML) 20 Page - Hynix Semiconductor

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Rev. 1.2 /June. 2008
20
HY5FS123235AFCP
Figure 9: Bank Activation Command Cycle
Data Terminator Disable
Bus snooping for READ commands other than CS# is used to control the on-die termination in the dual load
configuration. See Section DRIVER & TERMINATION for more details on GDDR4 SDRAM Termination.
Bank Restrictions
For eight bank GDDR4 devices, there may be a need to limit the number of activates in a rolling window to ensure
that the instantaneous current supplying capability of the devices is not exceeded. To reflect the true capability of the
DRAM instantaneous current supply, the parameter tFAW (four activate window) is defined. No more than 4 banks may
be activated in a rolling tFAW window. Converting to clocks is done by dividing tFAW (ns) by tCK (ns) and rounding up to
next integer value.
As an example of the rolling window, if (tFAW/tCK) rounds up to 10 clocks, and an activate command is issued in clock
N, no more than three further activate commands may be issued in clocks N+1 through N+9.
It is also acceptable and preferable that GDDR4 SDRAMs have no restrictions on the number of banks activated.
Figure 10: tFAW
ACT
NOP
ACT
NOP
NOP
RD/WR
NOP
Row x
Row x
Row y
Row y
Col y
Col y
BA x
BA y
BA y
tRRD
tRCD
CK#
CK
Command
A0-A12
BA0-BA2
= Don’t Care
ACT
ACT
ACT
ACT
ACT
ACT
ACT
ACT
T0
T1
T2
T3
Tm
Tm+1
Tm+2
Tm+3
Tm+4
tRRD
tRRD
tRRD
tRRD
tRRD
tRRD
tFAW
tFAW+3*tRRD
CK#
CK
CMD


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