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H57V2582GTR-75I 数据表(PDF) 9 Page - Hynix Semiconductor

部件名 H57V2582GTR-75I
功能描述  256Mb Synchronous DRAM based on 8M x 4Bank x8 I/O
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制造商  HYNIX [Hynix Semiconductor]
网页  http://www.skhynix.com/kor/main.do
标志 HYNIX - Hynix Semiconductor

H57V2582GTR-75I 数据表(HTML) 9 Page - Hynix Semiconductor

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111
Synchronous DRAM Memory 256Mbit
H57V2582GTR-xxI Series
Rev 1.0 / Aug. 2009
9
CAPACITANCE (f=1MHz)
DC CHARACTERRISTICS I (TA= -40 to 85oC)
Note:
1. VIN = 0 to 3.6V, All other balls are not tested under VIN =0V
2. DOUT is disabled, VOUT=0 to 3.6
Parameter
Pin
Symbol
Min
Max
Unit
Input capacitance
CLK
CI1
2.0
4.0
pF
A0 ~ A12, BA0, BA1, CKE, CS, RAS, CAS, WE
CI2
2.0
4.0
pF
DQM
CI3
2.0
4.0
pF
Data input / output
capacitance
DQ0 ~ DQ7
CI/O
3.5
6.5
pF
Parameter
Symbol
Min
Max
Unit
Note
Input Leakage Current
ILI
-1
1
uA
1
Output Leakage Current
ILO
-1
1
uA
2
Output High Voltage
VOH
2.4
-
V
IOH = -4mA
Output Low Voltage
VOL
-
0.4
V
IOL = +4mA
Z0 = 50 Ohom
50pF
RT = 50
Ohom
VTT =
1.4V
Output
AC Output Load Circuit
50pF
RT = 50
Ohom
VTT =
1.4V
Output
DC Output Load Circuit


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