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H57V2582GTR-60L 数据表(PDF) 6 Page - Hynix Semiconductor |
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H57V2582GTR-60L 数据表(HTML) 6 Page - Hynix Semiconductor |
6 / 22 page 111 Synchronous DRAM Memory 256Mbit H57V2582GTR Series Rev 1.0 / Aug. 2009 6 54_TSOPII Pin DESCRIPTIONS SYMBOL TYPE DESCRIPTION CLK INPUT Clock : The system clock input. All other inputs are registered to the SDRAM on the rising edge of CLK CKE INPUT Clock Enable: Controls internal clock signal and when deactivated, the SDRAM will be one of the states among power down, suspend or self refresh CS INPUT Chip Select: Enables or disables all inputs except CLK, CKE and DQM BA0, BA1 INPUT Bank Address: Selects bank to be activated during RAS activity Selects bank to be read/written during CAS activity A0 ~ A12 INPUT Row Address: RA0 ~ RA12, Column Address: CA0 ~ CA9 Auto-precharge flag: A10 RAS, CAS, WE INPUT Command Inputs: RAS, CAS and WE define the operation Refer function truth table for details DQM I/O Data Mask DQ0 ~ DQ7 I/O Data Input / Output: Multiplexed data input / output pin VDD / VSS SUPPLY Power supply for internal circuits and input buffers VDDQ / VSSQ SUPPLY Power supply for output buffers NC - No connection : These pads should be left unconnected |
类似零件编号 - H57V2582GTR-60L |
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类似说明 - H57V2582GTR-60L |
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