H57V2562GTR-60L datasheet(12/23 Pages) HYNIX

部件名	H57V2562GTR-60L

功能描述	256Mb Synchronous DRAM based on 4M x 4Bank x16 I/O

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制造商	HYNIX [Hynix Semiconductor]

网页	http://www.skhynix.com/kor/main.do

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12 / 23 page

Rev 1.0 / Aug. 2009

12

111

Synchronous DRAM Memory 256Mbit

H57V2562GTR Series

AC CHARACTERISTICS II (AC operating conditions unless otherwise noted)

Note:

1. A new command can be given tRC after self refresh exit.

Parameter

Speed

(MHz)

200

166

133

Unit

Note

Min

Max

Min

Max

Min

Max

RAS Cycle Time

Operation

tRC

55

-

60

-

63

-

ns

Auto Refresh

tRRC

55

-

60

-

63

-

ns

RAS to CAS Delay

tRCD

15

-

18

-

20

-

ns

RAS Active Time

tRAS

38.7

100K

42

100K

42

100K

ns

RAS Precharge Time

tRP

15

-

18

-

20

-

ns

RAS to RAS Bank Active Delay

tRRD

10

-

12

-

15

-

ns

CAS to CAS Delay

tCCD

1

-

1-1-

CLK

Write Command to Data-In Delay

tWTL

0-

0

-0

-

CLK

Data-in to Precharge Command

tDPL

2

-

2-2-

CLK

Data-In to Active Command

tDAL

tDPL + tRP

DQM to Data-Out Hi-Z

tDQZ

2

-

2-2-

CLK

DQM to Data-In Mask

tDQM

0

-

0-0-

CLK

MRS to New Command

tMRD

2

-

2-2-

CLK

Precharge to Data

Output High-Z

CL = 3

tPROZ3

3

-

3-3-

CLK

CL = 2

tPROZ2

--

2

-

CLK

Power Down Exit Time

tDPE

1

-

1-1-

CLK

Self Refresh Exit Time

tSRE

1

-

1-1-

CLK

1

Refresh Time

tREF

-64-

64

-64

ms

类似零件编号 - H57V2562GTR-60L

制造商	部件名	数据表	功能描述
Hynix Semiconductor	H57V2562GTR-60I	234Kb / 23P	256Mb Synchronous DRAM based on 4M x 4Bank x16 I/O
Hynix Semiconductor	H57V2562GTR-60J	234Kb / 23P	256Mb Synchronous DRAM based on 4M x 4Bank x16 I/O

More results

类似说明 - H57V2562GTR-60L

制造商	部件名	数据表	功能描述
Hynix Semiconductor	H57V2562GTR-60I	234Kb / 23P	256Mb Synchronous DRAM based on 4M x 4Bank x16 I/O
	H57V2562GFR-60C	279Kb / 23P	256Mb Synchronous DRAM based on 4M x 4Bank x16 I/O
	H57V2582GTR-60C	228Kb / 22P	256Mb Synchronous DRAM based on 8M x 4Bank x8 I/O
	H57V2582GTR-60I	229Kb / 22P	256Mb Synchronous DRAM based on 8M x 4Bank x8 I/O
	HY57V641620ET	117Kb / 13P	64Mb Synchronous DRAM based on 1M x 4Bank x16 I/O
	HY57V281620ET	126Kb / 13P	128Mb Synchronous DRAM based on 2M x 4Bank x16 I/O
	H57V1262GFR-50X	256Kb / 12P	128Mb Synchronous DRAM based on 2M x 4Bank x16 I/O
	HY5V66EF6	959Kb / 12P	64Mb Synchronous DRAM based on 1M x 4Bank x16 I/O
	H57V1262GTR-50X	205Kb / 13P	128Mb Synchronous DRAM based on 2M x 4Bank x16 I/O
	HY5S5B6ELF-HE	245Kb / 27P	256MBit MOBILE SDR SDRAMs based on 4M x 4Bank x16 I/O

More results

H57V2562GTR-60L 数据表(PDF) 12 Page - Hynix Semiconductor

H57V2562GTR-60L 数据表(HTML) 12 Page - Hynix Semiconductor

类似零件编号 - H57V2562GTR-60L

类似说明 - H57V2562GTR-60L

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H57V2562GTR-60L 数据表(PDF) 12 Page - Hynix Semiconductor

H57V2562GTR-60L 数据表(HTML) 12 Page - Hynix Semiconductor

类似零件编号 - H57V2562GTR-60L

类似说明 - H57V2562GTR-60L

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数据表 下载

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