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H57V2562GTR-60I 数据表(PDF) 9 Page - Hynix Semiconductor |
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H57V2562GTR-60I 数据表(HTML) 9 Page - Hynix Semiconductor |
9 / 23 page Rev 1.0 / Aug. 2009 9 111 Synchronous DRAM Memory 256Mbit H57V2562GTR-xxI Series CAPACITANCE (f=1MHz) DC CHARACTERRISTICS I (TA= -40 to 85oC) Note: 1. VIN = 0 to 3.6V, All other balls are not tested under VIN =0V 2. DOUT is disabled, VOUT=0 to 3.6 Parameter Pin Symbol Min Max Unit Input capacitance CLK CI1 2.0 4.0 pF A0 ~ A12, BA0, BA1, CKE, CS, RAS, CAS, WE CI2 2.0 4.0 pF LDQM, UDQM CI3 2.0 4.0 pF Data input / output capacitance DQ0 ~ DQ15 CI/O 3.5 6.5 pF Parameter Symbol Min Max Unit Note Input Leakage Current ILI -1 1 uA 1 Output Leakage Current ILO -1 1 uA 2 Output High Voltage VOH 2.4 - V IOH = -4mA Output Low Voltage VOL - 0.4 V IOL = +4mA Z0 = 50 Ohom 50pF RT = 50 Ohom VTT = 1.4V Output AC Output Load Circuit 50pF RT = 50 Ohom VTT = 1.4V Output DC Output Load Circuit |
类似零件编号 - H57V2562GTR-60I |
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类似说明 - H57V2562GTR-60I |
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