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H55S1G22MFP-75 数据表(PDF) 9 Page - Hynix Semiconductor

部件名 H55S1G22MFP-75
功能描述  1Gb (32Mx32bit) Mobile SDRAM
Download  53 Pages
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制造商  HYNIX [Hynix Semiconductor]
网页  http://www.skhynix.com/kor/main.do
标志 HYNIX - Hynix Semiconductor

H55S1G22MFP-75 数据表(HTML) 9 Page - Hynix Semiconductor

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Rev 1.2 / Jun. 2008
9
11
1Gbit (32Mx32bit) Mobile SDR Memory
H55S1G(2/3)2MFP Series
CAPACITANCE (TA= 25 oC, f=1MHz)
DC CHARACTERRISTICS I (TA= -30 to 85oC)
Note :
1. VIN = 0 to 1.8V. All other pins are not tested under VIN=0V.
2. DOUT is disabled. VOUT= 0 to 1.95V.
3. IOUT = - 0.1mA
4. IOUT = + 0.1mA
Parameter
Pin
Symbol
6/H
Unit
Min
Max
Input capacitance
CLK
CI1
1.5
3.5
pF
A0~A13, BA0, BA1, CKE, CS, RAS,
CAS, WE, DQM0~3
CI2
1.5
3.0
pF
Data input/output capacitance
DQ0 ~ DQ31
CI/O
2.0
4.5
pF
Parameter
Symbol
Min
Max
Unit
Note
Input Leakage Current
ILI
-1
1
uA
1
Output Leakage Current
ILO
-1.5
1.5
uA
2
Output High Voltage
VOH
0.9*VDDQ
-
V
3
Output Low Voltage
VOL
-
0.1*VDDQ
V
4


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