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H55S1G32MFP-75 数据表(PDF) 13 Page - Hynix Semiconductor |
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H55S1G32MFP-75 数据表(HTML) 13 Page - Hynix Semiconductor |
13 / 53 page Rev 1.2 / Jun. 2008 13 11 1Gbit (32Mx32bit) Mobile SDR Memory H55S1G(2/3)2MFP Series AC CHARACTERISTICS II (AC operating conditions unless otherwise noted) Parameter Symbol 166MHz 133MHz 105MHz Unit Note Min Max Min Max Min Max RAS Cycle Time tRC 60 - 72.5 - 90 - ns RAS to CAS Delay tRCD 18 - 22.5 - 28.5 - ns RAS Active Time tRAS 42 100K 45 100K 60 100K ns RAS Precharge Time tRP 18 - 22.5 - 28.5 - ns RAS to RAS Bank Active Delay tRRD 12 - 15 - 19 - ns AUTO REFRESH Period tRFC 110 - 110 - 110 - ns CAS to CAS Delay tCCD 1-1-1- CLK Write Command to Data-In Delay tWTL 0 -0 -0 - CLK Data-in to Precharge Command tDPL 2-2-2- CLK Data-In to Active Command tDAL tDPL+tRP DQM to Data-Out Hi-Z tDQZ 2-2-2- CLK DQM to Data-In Mask tDQM 0-0-0- CLK MRS to New Command tMRD 2-2-2- CLK Precharge to Data Output High-Z CAS Latency=3 tPROZ3 3- 3- 3- CLK CAS Latency=2 tPROZ2 2- 2- 2- CLK Power Down Exit Time tDPE 1CLK + tCKS - 1CLK + tCKS - 1CLK + tCKS -CLK Self Refresh Exit Time tXSR 120 - 120 - 120 - ns Refresh Time tREF -64- 64 -64 ms |
类似零件编号 - H55S1G32MFP-75 |
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类似说明 - H55S1G32MFP-75 |
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