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H55S1G32MFP-60 数据表(PDF) 29 Page - Hynix Semiconductor |
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H55S1G32MFP-60 数据表(HTML) 29 Page - Hynix Semiconductor |
29 / 53 page Rev 1.2 / Jun. 2008 29 11 1Gbit (32Mx32bit) Mobile SDR Memory H55S1G(2/3)2MFP Series READ to READ Data from a read burst may be concatenated or truncated by a subsequent READ command. The first data from the new burst follows either the last element of a completed burst or the last desired element of a longer burst that is being truncated. When another read command is executed at the same ROW address of the same bank as the preceding read com- mand execution, the second read can be performed after an interval of no less than 1 clock. Even when the first com- mand is a burst read that is not yet finished, the data read by the second command will be valid. Consecutive Read Bursts A READ command can be initiated on any clock cycle following a previous READ command. Non-consecutive Reads are shown in Figure. Full-speed random read accesses within a page or pages can be performed as shown in Fig. CLK Do a0 READ CL =3 CL =2 Don't Care Command Address DQ DQ Do a1 Do b0 Do b1 Do a0 Do a1 Do b0 READ’ BA, Col b BA, Col a NOP NOP |
类似零件编号 - H55S1G32MFP-60 |
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类似说明 - H55S1G32MFP-60 |
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