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H55S1G32MFP-60 数据表(PDF) 10 Page - Hynix Semiconductor |
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H55S1G32MFP-60 数据表(HTML) 10 Page - Hynix Semiconductor |
10 / 53 page Rev 1.2 / Jun. 2008 10 11 1Gbit (32Mx32bit) Mobile SDR Memory H55S1G(2/3)2MFP Series DC CHARACTERISTICS II (TA= -30 to 85oC) Notes : 1. IDD1 and IDD4 depend on output loading and cycle rates. Specified values are measured with the output open 2. See the tables of next page for more specific IDD6 current values. 3. Please contact Hynix office for more information and ability for DPD operation. Deep Power Down operation is a hynix optional function. Parameter Symbol Test Condition Speed Unit Note 166MHz 133MHz 105MHz Operating Current IDD1 Burst length=1, One bank active tRC ≥ tRC(min), IOL=0mA 90 80 mA 1 Precharge Standby Current in Power Down Mode IDD2P CKE ≤ VIL(max), tCK = min 0.4 mA IDD2PS CKE ≤ VIL(max), tCK = ∞ 0.4 mA Precharge Standby Current in Non Power Down Mode IDD2N CKE ≥ VIH(min), CS ≥ VIH(min), tCK = min Input signals are changed one time during 2clks. All other pins ≥ VDD-0.2V or ≤ 0.2V 5 mA IDD2NS CKE ≥ VIH(min), tCK = ∞ Input signals are stable. 2 Active Standby Current in Power Down Mode IDD3P CKE ≤ VIL(max), tCK = min 3 mA IDD3PS CKE ≤ VIL(max), tCK = ∞ 2 Active Standby Current in Non Power Down Mode IDD3N CKE ≥ VIH(min), CS ≥ VIH(min), tCK = 15ns Input signals are changed one time during 2clks. All other pins ≥ VDD-0.2V or ≤ 0.2V 10 mA IDD3NS CKE ≥ VIH(min), tCK = ∞ Input signals are stable. 5 Burst Mode Operating Current IDD4 tCK ≥ tCK(min), IOL=0mA All banks active 70 60 mA 1 Auto Refresh Current IDD5 tRFC ≥ tRFC(min) 120 mA Self Refresh Current IDD6 CKE ≤ 0.2V See Next Page mA 2 Standby Current in Deep Power Down Mode IDD7 See the Page for “Deep Power Down Mode” 10 uA 3 |
类似零件编号 - H55S1G32MFP-60 |
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类似说明 - H55S1G32MFP-60 |
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