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H55S1G32MFP-60 数据表(PDF) 8 Page - Hynix Semiconductor

部件名 H55S1G32MFP-60
功能描述  1Gb (32Mx32bit) Mobile SDRAM
Download  53 Pages
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制造商  HYNIX [Hynix Semiconductor]
网页  http://www.skhynix.com/kor/main.do
标志 HYNIX - Hynix Semiconductor

H55S1G32MFP-60 数据表(HTML) 8 Page - Hynix Semiconductor

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Rev 1.2 / Jun. 2008
8
11
1Gbit (32Mx32bit) Mobile SDR Memory
H55S1G(2/3)2MFP Series
ABSOLUTE MAXIMUM RATING
DC OPERATING CONDITION (TA= -30 to 85oC )
Note :
1. All Voltages are referenced to VSS = 0V
2. VDDQ must not exceed the level of VDD
AC OPERATING TEST CONDITION (TA= -30 to 85 oC, VDD = 1.8V, VSS = 0V)
Parameter
Symbol
Rating
Unit
Ambient Temperature
TA
-30 ~ 85
oC
Storage Temperature
TSTG
-55 ~ 150
oC
Voltage on Any Pin relative to VSS
VIN, VOUT
-0.3 ~ VDDQ+0.3
V
Voltage on VDD relative to VSS
VDD
-0.3 ~ 2.7
V
Voltage on VDDQ relative to VSS
VDDQ
-0.3 ~ 2.7
V
Short Circuit Output Current
IOS
50
mA
Power Dissipation
PD
1
W
Parameter
Symbol
Min
Typ
Max
Unit
Note
Power Supply Voltage
VDD
1.7
1.8
1.95
V
1
Power Supply Voltage
VDDQ
1.7
1.8
1.95
V
1, 2
Input High Voltage
VIH
0.8*VDDQ
-
VDDQ+0.3
V
1, 2
Input Low Voltage
VIL
-0.3
-
0.2*VDDQ
V1, 2
Parameter
Symbol
Value
Unit
Note
AC Input High/Low Level Voltage
VIH / VIL
0.9*VDDQ /
0.2*VDDQ
V
Input Timing Measurement Reference Level Voltage
Vtrip
0.5*VDDQ
V
Input Rise/Fall Time
tR / tF
1ns
Output Timing Measurement Reference Level Voltage
Voutref
0.5*VDDQ
V
Output Load Capacitance for Access Time Measurement
CL
pF


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