数据搜索系统,热门电子元器件搜索
  Chinese  ▼

Delete All
ON OFF
ALLDATASHEETCN.COM

X  

预览 PDF Download HTML

H55S1G62MFP-60 数据表(PDF) 32 Page - Hynix Semiconductor

部件名 H55S1G62MFP-60
功能描述  1Gb (64Mx16bit) Mobile SDRAM
Download  53 Pages
Scroll/Zoom Zoom In 100%  Zoom Out
制造商  HYNIX [Hynix Semiconductor]
网页  http://www.skhynix.com/kor/main.do
标志 HYNIX - Hynix Semiconductor

H55S1G62MFP-60 数据表(HTML) 32 Page - Hynix Semiconductor

Back Button H55S1G62MFP-60 Datasheet HTML 28Page - Hynix Semiconductor H55S1G62MFP-60 Datasheet HTML 29Page - Hynix Semiconductor H55S1G62MFP-60 Datasheet HTML 30Page - Hynix Semiconductor H55S1G62MFP-60 Datasheet HTML 31Page - Hynix Semiconductor H55S1G62MFP-60 Datasheet HTML 32Page - Hynix Semiconductor H55S1G62MFP-60 Datasheet HTML 33Page - Hynix Semiconductor H55S1G62MFP-60 Datasheet HTML 34Page - Hynix Semiconductor H55S1G62MFP-60 Datasheet HTML 35Page - Hynix Semiconductor H55S1G62MFP-60 Datasheet HTML 36Page - Hynix Semiconductor Next Button
Zoom Inzoom in Zoom Outzoom out
 32 / 53 page
background image
Rev 1.2 / Jul. 2008
32
11
1Gbit (64Mx16bit) Mobile SDR Memory
H55S1G62MFP Series
READ to WRITE
Data from READ burst must be completed or truncated before a subsequent WRITE command can be issued. If trun-
cation is necessary, the BURST TERMINATE command must be used, as shown in next fig.
Read to Write
Notes :
1. Same bank, same ROW address: When the write command is executed at the same ROW address of the same bank
as the preceding read command, the write command can be performed after an interval of no less than 1 clock.
However, DQM must be set High so that the output buffer becomes High-Z before data input.
2. Same bank, different ROW address: When the ROW address changes, consecutive write commands cannot be
executed; it is necessary to separate the two commands with a precharge command and a bank active command.
3. Different bank: When the bank changes, the write command can be performed after an interval of no less than 1
cycle, provided that the other bank is in the bank active state. However, DQM must be set High so that the output
buffer becomes High-Z before data input.
CLK
CL =3
CL =2
Don't Care
DQ
DQ
READ
BURST
WRITE
Command
BA, Col
n
Address
Do
n
Do
n'
Do
n
Do
n'
BA, Col
b
DI
b0
DI
b1
DI
b2
DI
b3
DI
b0
DI
b1
DI
b2
DI
b3
1) DO
n = Data Out from column n; DI b = Data In to column b


Html Pages

1  2  3  4  5  6  7  8  9  10  11  12  13  14  15  16  17  18  19  20  21  22  23  24  25  26  27  28  29  30  31  32  33  34  35  36  37  38  39  40  41  42  43  44  45  46  47  48  49  50  51  52  53 


数据表 下载

Go To PDF Page


链接网址




隐私政策
ALLDATASHEETCN.COM
ALLDATASHEET是否为您带来帮助?  [ DONATE ] 

关于 Alldatasheet   |   广告服务   |   联系我们   |   隐私政策   |   链接交换   |   制造商名单
All Rights Reserved©Alldatasheet.com


Mirror Sites
English : Alldatasheet.com  |   English : Alldatasheet.net  |   Chinese : Alldatasheetcn.com  |   German : Alldatasheetde.com  |   Japanese : Alldatasheet.jp
Russian : Alldatasheetru.com  |   Korean : Alldatasheet.co.kr  |   Spanish : Alldatasheet.es  |   French : Alldatasheet.fr  |   Italian : Alldatasheetit.com
Portuguese : Alldatasheetpt.com  |   Polish : Alldatasheet.pl  |   Vietnamese : Alldatasheet.vn