H55S1G62MFP-60 datasheet(13/53 Pages) HYNIX

部件名	H55S1G62MFP-60

功能描述	1Gb (64Mx16bit) Mobile SDRAM

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制造商	HYNIX [Hynix Semiconductor]

网页	http://www.skhynix.com/kor/main.do

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13 / 53 page

Rev 1.2 / Jul. 2008

13

11

1Gbit (64Mx16bit) Mobile SDR Memory

H55S1G62MFP Series

AC CHARACTERISTICS II (AC operating conditions unless otherwise noted)

Parameter

Symbol

166MHz

133MHz

105MHz

Unit Note

Min Max Min Max Min Max

RAS Cycle Time

tRC

60

-

72.5

-

90

-

ns

RAS to CAS Delay

tRCD

18

-

22.5

-

28.5

-

ns

RAS Active Time

tRAS

42

100K

45

100K

60

100K

ns

RAS Precharge Time

tRP

18

-

22.5

-

28.5

-

ns

RAS to RAS Bank Active Delay

tRRD

12

-

15

-

19

-

ns

AUTO REFRESH Period

tRFC

110

-

110

-

110

-

ns

CAS to CAS Delay

tCCD

1-1-1-

CLK

Write Command to Data-In Delay

tWTL

0

-0

-

CLK

Data-in to Precharge Command

tDPL

2-2-2-

CLK

Data-In to Active Command

tDAL

tDPL+tRP

DQM to Data-Out Hi-Z

tDQZ

2-2-2-

CLK

DQM to Data-In Mask

tDQM

0-0-0-

CLK

MRS to New Command

tMRD

2-2-2-

CLK

Precharge to Data Output

High-Z

CAS Latency=3

tPROZ3

3-

CLK

CAS Latency=2

tPROZ2

2-

CLK

Power Down Exit Time

tDPE

1CLK

+

tCKS

-

1CLK

+

tCKS

-

1CLK

+

tCKS

-CLK

Self Refresh Exit Time

tXSR

120

-

120

-

120

-

ns

Refresh Time

tREF

-64-

64

-64

ms

类似零件编号 - H55S1G62MFP-60

制造商	部件名	数据表	功能描述
Hynix Semiconductor	H55S1G22MFP-60	912Kb / 53P	1Gb (32Mx32bit) Mobile SDRAM
	H55S1G22MFP-75	912Kb / 53P	1Gb (32Mx32bit) Mobile SDRAM
	H55S1G22MFP-A3	912Kb / 53P	1Gb (32Mx32bit) Mobile SDRAM
	H55S1G32MFP-60	912Kb / 53P	1Gb (32Mx32bit) Mobile SDRAM
	H55S1G32MFP-75	912Kb / 53P	1Gb (32Mx32bit) Mobile SDRAM

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类似说明 - H55S1G62MFP-60

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