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BC817-16 数据表(PDF) 2 Page - Taiwan Semiconductor Company, Ltd |
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BC817-16 数据表(HTML) 2 Page - Taiwan Semiconductor Company, Ltd |
2 / 2 page BC817-16/-25/-40 300mW, NPN Small Signal Transistor Small Signal Diode Rating and Sharacteristic Curves FIG 1 Typical Pulsed Current Gain vs Collector Current 0.001 0.01 0.1 1 10 0 100 200 300 400 500 Ambient Temperature (°C) Reverse Voltage (V) FIG 2 Collector-Emitter Saturation Voltage vs Collector Current 0.01 0.1 1 10 0 0.1 0.2 0.3 0.4 0.5 0.6 VCE=5 25 oC hFE VCE(sat), Collector-Emitter Voltage (V) FIG 3 Base-Emitter Saturation Voltage vs Collector Current 1 10 100 1000 0 0.2 0.4 0.6 0.8 1 1.2 1.4 VBE(sat),Base-Emitter Voltage (V) 25 oC 25 oC FIG 4 Base-Emitter on Voltage vs Collector Current 0.001 0.01 0.1 1 0 0.2 0.4 0.6 0.8 1 1.2 1.4 25 o VBE(sat),Base-Emitter on Voltage (V) FIG 5 Collector-Base Capacitance vs Collector-Base Voltage 0 10 20 30 40 0 4 8 12 16 20 24 28 VCB,Collector-Base Voltage (V) Version : C09 |
类似零件编号 - BC817-16 |
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类似说明 - BC817-16 |
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