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BTB1184J3 数据表(PDF) 1 Page - Cystech Electonics Corp. |
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BTB1184J3 数据表(HTML) 1 Page - Cystech Electonics Corp. |
1 / 6 page CYStech Electronics Corp. Spec. No. : C817J3 Issued Date : 2003.04.18 Revised Date : 2009.02.04 Page No. : 1/6 BTB1184J3 CYStek Product Specification Low Vcesat PNP Epitaxial Planar Transistor BVCEO -50V IC -3A RCESAT 130mΩ BTB1184J3 Features • Low VCE(sat) • Excellent current gain characteristics • Complementary to BTD1760J3 • RoHS compliant package Symbol Outline Absolute Maximum Ratings (Ta=25 °C) BTB1184J3 TO-252 Parameter Symbol Limits Unit Collector-Base Voltage VCBO -60 V Collector-Emitter Voltage VCEO -50 V Emitter-Base Voltage VEBO -6 V Collector Current(DC) IC -3 Collector Current(Pulse) ICP -7 *1 A Power Dissipation (TA=25℃) Pd(TA=25℃) 1 Power Dissipation (TC=25℃) Pd(TC=25℃) 15 *2 W Junction Temperature Tj 150 °C Storage Temperature Tstg -55~+150 °C Note : *1 . Single Pulse Pw=10ms *2 . Printed circuit board, 1.7mm thick, collector copper plating 10mm*10mm or larger. B:Base B C E C:Collector E:Emitter |
类似零件编号 - BTB1184J3 |
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类似说明 - BTB1184J3 |
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