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BTB772SA3 数据表(PDF) 2 Page - Cystech Electonics Corp. |
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BTB772SA3 数据表(HTML) 2 Page - Cystech Electonics Corp. |
2 / 4 page CYStech Electronics Corp. Spec. No. : C817A3-R Issued Date : 2003.05.31 Revised Date:2006.05.15 Page:2/4 BTB772SA3 CYStek Product Specification Characteristics (Ta=25 °C) Symbol Min. Typ. Max. Unit Test Conditions BVCBO -50 - - V IC=-100μA, IE=0 BVCEO -50 - - V IC=-1mA, IB=0 BVEBO -5 - - V IE=-50μA, IC=0 ICBO - - -1 μA VCB=-40V, IE=0 ICEO - - -1 μA VCE=-30V, IB=0 IEBO - - -1 μA VEB=-5V, IC=0 *VCE(sat) - - -0.3 V IC=-400mA, IB=-20mA *VCE(sat) - -0.3 -0.5 V IC=-2A, IB=-0.1A *VBE(sat) - -1 -2 V IC=-2A, IB=-0.2A *hFE1 100 - - - VCE=-2V, IC=-20mA *hFE2 160 - - - VCE=-2V, IC=-100mA *hFE3 160 - 500 - VCE=-2V, IC=-500mA *hFE4 100 - - - VCE=-2V, IC=-1A fT - 80 - MHz VCE=-5V, IC=-0.1A, f=100MHz Cob - 55 - pF VCB=-10V, f=1MHz *Pulse Test : Pulse Width ≤380μs, Duty Cycle≤2% Classification Of hFE 3 Rank P E Range 160~320 250~500 Characteristic Curves Current gain vs Collector current 10 100 1000 1 10 100 1000 10000 Collector current---IC(mA) VCE=5V VCE=2V VCE=1V C-E saturation voltage vs Collector current 1 10 100 1000 10000 1 10 100 1000 10000 Collector current---IC(mA) IC=40IB IC=20IB IC=10IB |
类似零件编号 - BTB772SA3 |
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类似说明 - BTB772SA3 |
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