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TS256MSDM80 数据表(PDF) 3 Page - Transcend Information. Inc. |
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TS256MSDM80 数据表(HTML) 3 Page - Transcend Information. Inc. |
3 / 8 page T T TS S S1 1 12 2 28 8 8M M M~ ~ ~2 2 2G G GS S SD D DM M M8 8 80 0 0 128M~2GB miniSD Memory Card Transcend Information Inc. 3 Bus Operating Conditions • General Parameter Symbol Min. Max. Unit Remark Peak voltage on all lines -0.3 VDD+0.3 V All Inputs Input Leakage Current -10 10 µA All Outputs Output Leakage Current -10 10 µA • Power Supply Voltage Parameter Symbol Min. Max. Unit Remark Supply voltage VDD 2.0 3.6 V CMD0, 15,55,ACMD41 commands Supply voltage specified in OCR register 2.7 3.6 V Except CMD0, 15,55, ACMD41 commands Supply voltage differentials (VSS1, VSS2) -0.3 0.3 V Power up time 250 ms From 0v to VDD Min. Note. The current consumption of any card during the power-up procedure must not exceed 10 mA. • Bus Signal Line Load The total capacitance CL the CLK line of the SD Memory Card bus is the sum of the bus master capacitance CHOST, the bus capacitance CBUS itself and the capacitance CCARD of each card connected to this line: CL = CHOST + CBUS + Ν*CCARD Where N is the number of connected cards. Requiring the sum of the host and bus capacitances not to exceed 30 pF for up to 10 cards, and 40 pF for up to 30 cards, the following values must not be exceeded: Parameter Symbol Min. Max. Unit Remark Bus signal line capacitance CL 100 pF fPP ≤ 20 MHz, 7 cards Single card capacitance CCARD 10 pF Maximum signal line inductance 16 nH fPP ≤ 20 MHz Pull-up resistance inside card (pin1) RDAT3 10 90 k Ω May be used for card detection Note that the total capacitance of CMD and DAT lines will be consist of CHOST, CBUS and one CCARD only since they are connected separately to the SD Memory Card host. Parameter Symbol Min. Max. Unit Remark Pull-up resistance RCMD, RDAT 10 100 k Ω To prevent bus floating Bus signal line capacitance CL 250 pF fPP ≤ 5 MHz, 21 cards |
类似零件编号 - TS256MSDM80 |
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类似说明 - TS256MSDM80 |
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