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TD62001AP 数据表(PDF) 3 Page - Toshiba Semiconductor |
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TD62001AP 数据表(HTML) 3 Page - Toshiba Semiconductor |
3 / 13 page TD62001~004P/AP/F/AF 2001-06-27 3 RECOMMENDED OPERATING CONDITIONS (Ta = −40~85°C and Ta = −30~75°C for only Type−P) CHARACTERISTIC SYMBOL CONDITION MIN TYP. MAX UNIT P, F 0 ― 35 Output Sustaining Voltage AP, AF VCE (SUS) 0 ― 50 V Duty = 10% 0 ― 370 AP Duty = 50% 0 ― 130 Duty = 10% 0 ― 295 P Duty = 50% 0 ― 95 Duty = 10% 0 ― 233 Output Current F, AF IOUT Tpw = 25 ms 7 Circuits Ta = 85°C Tj = 120°C Duty = 50% 0 ― 70 mA / ch Input Voltage Except TD62001P / AP / F / AF VIN 0 ― 24 V TD62002 14.5 ― 24 TD62003 2.8 ― 24 Input Voltage (Output On) TD62004 VIN (ON) IOUT = 400 mA hFE = 800 6.2 ― 24 V TD62001 0 ― 0.6 TD62002 0 ― 7.4 TD62003 0 ― 0.7 Input Voltage (Output Off) TD62004 VIN (OFF) 0 ― 1.0 V Input Current Only TD62001 IIN 0 ― 10 mA P, F ― ― 35 Clamp Diode Reverse Voltage AP, AF VR ― ― 50 V Clamp Diode Forward Current IF ― ― 350 mA P ― ― 0.6 AP Ta = 85°C ― ― 0.76 Power Dissipation AF, F PD Ta = 85°C (Note) ― ― 0.325 W Note: On glass epoxy PCB (30 × 30 × 1.6 mm Cu 50%) |
类似零件编号 - TD62001AP |
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类似说明 - TD62001AP |
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