BDX67A datasheet(3/4 Pages) COMSET

部件名	BDX67A

功能描述	NPN SILICON DARLINGTONS

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制造商	COMSET [Comset Semiconductor]

网页	http://comset.halfin.com

标志

3 / 4 page

COMSET SEMICONDUCTORS

3/4

BDX67, A, B, C

Symbol

Ratings

Test Condition(s)

Min

Typ

M

x

Unit

TCASE=25°C, VCB=100 V

-

1

TCASE=200°C, VCB=60 V

BDX67B

-

5

TCASE=25°C, VCB=120 V

-

1

ICBO

Collector-Base Cutoff

Current

TCASE=200°C, VCB=70 V

BDX67C

-

5

mA

hFE

DC Current Gain

VCE=3 V, IC=1 A

-

5200

-

hFE

DC Current Gain

VCE=3 V, IC=1 A

1000

-

hFE

DC Current Gain

VCE=3 V, IC=1 A

-

4000

-

VCE(SAT)

Collector-Emitter saturation

Voltage (*)

IC=10 A, IB=40 mA

BDX67

BDX67A

BDX67B

BDX67C

-

2

V

VBE

Base-Emitter Voltage(1&2)

VCE=3 V, IC=10 A

-

2,5

V

VF

Diode forward voltage

IF=10 A

-

2,5

-

V

Cc

IE=0 A, VCB=10V

BDX67

BDX67A

BDX67B

BDX67C

-

300

-

pF

ton

-

1

-

toff

Switching characteristics

VCC=12V, IC=-10 A, IB1=-

IB2=0.04 A

BDX67

BDX67A

BDX67B

BDX67C

-

3.5

-

µs

Fhfe

VCE=-3 V, IC=-5 A

BDX67

BDX67A

BDX67B

BDX67C

-

50

-

kHz

(*) Pulse Width

≈ 300 µs, Duty Cycle ∠ 2.0%

(1) collector-Emitter voltage limited et VCEci = V rated by an auxiliary circuit

类似零件编号 - BDX67A

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