BD181 datasheet(2/3 Pages) COMSET

部件名	BD181

功能描述	NPN SILICON TRANSISTOR POWER LINERAR AND SWITCHING APPLICATIONS

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制造商	COMSET [Comset Semiconductor]

网页	http://comset.halfin.com

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2 / 3 page

BD181 – BD182 – BD183

COMSET SEMICONDUCTORS

2/3

Symbol

Ratings

Value

Unit

BD181

BD182

PTOT

Power dissipation

BD183

117

W

BD181

BD182

TJ Ts

Junction

Storage Temperature

BD183

200

-65 to +200

°C

THERMAL CHARACTERISTICS

Symbol

Ratings

Value

Unit

RthJ-C

Thermal Resistance, Junction to Case

1.5

°C/W

ELECTRICAL CHARACTERISTICS

TC=25°C unless otherwise noted

Symbol

Ratings

Test Condition(s)

Min Typ Mx

Unit

BD181

-

BD182

-

IEBO

Emitter-Base Cutoff Current VEB= 7 V, IC=0

BD183

-

5.0

A

VCB=45 V

tj=200°C

BD181

-

2.0

VCB=60 V

tj=200°C

BD182

-

5.0

ICBO

Collector-Base Cutoff

Current

VCB=80 V

tj=200°C

BD183

-

5.0

mA

BD181

45

-

BD182

60

-

VCEO(BR)

Collector-Emitter

Breakdown Voltage (*)

IC=200 mA, IB=0

BD183

80

-

V

IC=3 A, IB=0.3 A

BD181

-

1.0

IC=4 A, IB=0.4 A

BD182

-

1.0

VCE(SAT)

Collector-Emitter saturation

Voltage (*)

IC=3 A, IB=0.3 A

BD183

-

1.0

V

BD181

55

-

BD182

70

-

VBR(CER)

Collector-Emitter

Breakdown Voltage (*)

IC=200 mA, RBE=100 Ω

BD183

85

-

V

类似零件编号 - BD181

制造商	部件名	数据表	功能描述
General Semiconductor	BD181	166Kb / 4P	HIGH-POWER SILICON NPN TRANSISTORS
List of Unclassifed Man...	BD181	144Kb / 3P	NPN SILICON TRANSISTOR POWER LINERAR AND SWITCHING APPLICATIONS
Comset Semiconductor	BD181	78Kb / 3P	NPN SILICON TRANSISTOR POWER LINERAR AND SWITCHING APPLICATIONS
Comset Semiconductor	BD181	78Kb / 3P	NPN SILICON TRANSISTOR POWER LINERAR AND SWITCHING APPLICATIONS

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类似说明 - BD181

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