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IXZ4DF18N50 数据表(PDF) 2 Page - IXYS Corporation |
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IXZ4DF18N50 数据表(HTML) 2 Page - IXYS Corporation |
2 / 7 page IXZ4DF18N50 RF Power MOSFET & DRIVER Device Specifications Device Performance Symbol Test Condition Minimum Typical Maximum Rds(ON) VCC = 15 V, ID = 0.5IDM25 Pulse Test, t ≤ 300 S, Duty Cycle ≤ 2% 0.29 VCC, VCCIN 8V 15V 20V IN (Signal Input) - 5V VCCIN+0.3V VIH (High Input Voltage) VCCIN -2V VCCIN+0.3V VIL (Low Input Voltage) 0.8V ZIN f = 1MHz 7960 Cstray f = 1MHz Any one pin to the back plane metal 46pf COSS VGS = 0V, VDS = 0.8VDSS(max) , f =1MHz 139pf tONDLY TC = 25°C VCC, VCCIN, VIN = 15V, 1 S Pulse, VDS = 50V, RL = 5.0 17 nS tOFFDLY 26 nS tR TC = 25°C VCC, VCCIN, VIN = 15V,1 S Pulse, VDS = 50V, RL = 5.0 3 nS tF 3 nS Symbol Maximum Ratings fMAX ID = 0.5IDM25 40MHz VDSS 500V VCC, VCCIN 20V IDSS VDS = 0.8VDSS TJ = 25C 50uA VGS = 0V TJ = 125C 1mA IDM25 TC = 25°C 19A IDM TC = 25°C, Pulse limited by TJM 95A IAR TC = 25°C 19A PT (MOSFET and Driver) TC = 25°C 500 W RthJC 0.25 °C/W RthJHS TBD °C/W Test Conditions Parameter Value Maximum Junction Temperature 150°C Operating Temperature Range - 40°C to 85°C Weight 5.5g |
类似零件编号 - IXZ4DF18N50 |
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类似说明 - IXZ4DF18N50 |
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