MC-4532CC726PF-A10 datasheet(6/16 Pages) ELPIDA

部件名	MC-4532CC726PF-A10

功能描述	32M-WORD BY 72-BIT SYNCHRONOUS DYNAMIC RAM MODULE UNBUFFERED TYPE

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制造商	ELPIDA [Elpida Memory]

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6

MC-4532CC726

Data Sheet E0053N10

DC Characteristics (Recommended Operating Conditions Unless Otherwise Noted)

Parameter

Symbol

Test condition

Grade MIN. MAX.

Unit

Notes

Operating current

ICC1

Burst length = 1

/CAS latency = 2

-A80

1,170

mA

1

tRC

≥ tRC(MIN.), IO = 0 mA

-A10

1,170

/CAS latency = 3

-A80

1,170

-A10

1,170

Precharge standby current in

ICC2P

CKE

≤ VIL(MAX.), tCK = 15 ns

18

mA

power down mode

ICC2PS CKE

≤ VIL(MAX.), tCK = ∞

18

Precharge standby current in

non power down mode

ICC2N

CKE

≥ VIH(MIN.), tCK = 15 ns, /CS ≥ VIH(MIN.),

Input signals are changed one time during 30 ns.

360

mA

ICC2NS CKE

≥ VIH(MIN.), tCK = ∞

Input signals are stable.

108

Active standby current in

ICC3P

CKE

≤ VIL(MAX.), tCK = 15 ns

90

mA

power down mode

ICC3PS CKE

≤ VIL(MAX.), tCK = ∞

72

Active standby current in

ICC3N

CKE

≥ VIH(MIN.), tCK = 15 ns, /CS ≥ VIH(MIN.),

450

mA

non power down mode

Input signals are changed one time during 30 ns.

ICC3NS CKE

≥ VIH(MIN.), tCK = ∞ , Input signals are stable.

360

Operating current

ICC4

tCK

≥ tCK(MIN.)

/CAS latency = 2

-A80

1,350

mA

2

(Burst mode)

IO = 0 mA

-A10

1,125

/CAS latency = 3

-A80

1,575

-A10

1,395

CBR (Auto) refresh current

ICC5

tRC

≥ tRC(MIN.)

/CAS latency = 2

-A80

2,340

mA

3

-A10

2,340

/CAS latency = 3

-A80

2,340

-A10

2,340

Self refresh current

ICC6

CKE

≤ 0.2 V

36

mA

Input leakage current

II(L)

VI = 0 to 3.6 V, All other pins not under test = 0 V

– 18

+ 18

µA

Input leakage current (CKE1)

–500

+500

µA

Output leakage current

IO(L)

DOUT is disabled, VO = 0 to 3.6 V

– 3

+ 3

µA

High level output voltage

VOH

IO = – 4.0 mA

2.4

V

Low level output voltage

VOL

IO = + 4.0 mA

0.4

V

Notes 1. ICC1 depends on output loading and cycle rates. Specified values are obtained with the output open. In

addition to this, ICC1 is measured on condition that addresses are changed only one time during tCK (MIN.).

2. ICC4 depends on output loading and cycle rates. Specified values are obtained with the output open. In

addition to this, ICC4 is measured on condition that addresses are changed only one time during tCK (MIN.).

3. ICC5 is measured on condition that addresses are changed only one time during tCK (MIN.).

类似零件编号 - MC-4532CC726PF-A10

制造商	部件名	数据表	功能描述
NEC	MC-4532CC726PF-A10	153Kb / 16P	32M-WORD BY 72-BIT SYNCHRONOUS DYNAMIC RAM MODULE UNBUFFERED TYPE

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类似说明 - MC-4532CC726PF-A10

制造商	部件名	数据表	功能描述
NEC	MC-4532CC726	153Kb / 16P	32M-WORD BY 72-BIT SYNCHRONOUS DYNAMIC RAM MODULE UNBUFFERED TYPE
Elpida Memory	MC-4532CC726XFA	181Kb / 14P	32M-WORD BY 72-BIT SYNCHRONOUS DYNAMIC RAM MODULE UNBUFFERED TYPE
NEC	MC-4532CC727	220Kb / 16P	32M-WORD BY 72-BIT SYNCHRONOUS DYNAMIC RAM MODULE UNBUFFERED TYPE
Elpida Memory	MC-4532CC727	172Kb / 16P	32M-WORD BY 72-BIT SYNCHRONOUS DYNAMIC RAM MODULE UNBUFFERED TYPE
	MC-4532CC727XFA	174Kb / 14P	32M-WORD BY 72-BIT SYNCHRONOUS DYNAMIC RAM MODULE UNBUFFERED TYPE
	MC-4532CD647XFA	171Kb / 14P	32M-WORD BY 64-BIT SYNCHRONOUS DYNAMIC RAM MODULE UNBUFFERED TYPE
NEC	MC-4532CD647	207Kb / 16P	32M-WORD BY 64-BIT SYNCHRONOUS DYNAMIC RAM MODULE UNBUFFERED TYPE
NEC	MC-4532CD646	148Kb / 16P	32M-WORD BY 64-BIT SYNCHRONOUS DYNAMIC RAM MODULE UNBUFFERED TYPE
Elpida Memory	MC-4532CD647	167Kb / 16P	32M-WORD BY 64-BIT SYNCHRONOUS DYNAMIC RAM MODULE UNBUFFERED TYPE
Elpida Memory	MC-4532CD646	170Kb / 16P	32M-WORD BY 64-BIT SYNCHRONOUS DYNAMIC RAM MODULE UNBUFFERED TYPE