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EBE51UD8ABFV-BE-E 数据表(PDF) 14 Page - Elpida Memory |
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EBE51UD8ABFV-BE-E 数据表(HTML) 14 Page - Elpida Memory |
14 / 22 page EBE51UD8ABFV Preliminary Data Sheet E0528E12 (Ver. 1.2) 14 ODT DC Electrical Characteristics (TC = 0 to +85 °C, VDD, VDDQ = 1.85V ± 0.05V) (DDR2 SDRAM Component Specification) Parameter Symbol min. typ. max. Unit Notes Rtt effective impedance value for EMRS (A6, A2) = 0, 1; 75 Ω Rtt1(eff) 60 75 90 Ω 1 Rtt effective impedance value for EMRS (A6, A2) = 1, 0; 150 Ω Rtt2(eff) 120 150 180 Ω 1 Deviation of VM with respect to VDDQ/2 ∆VM −3.75 +3.75 % 1 Note: 1. Test condition for Rtt measurements. Measurement Definition for Rtt(eff) Apply VIH (AC) and VIL (AC) to test pin separately, then measure current I(VIH(AC)) and I(VIL(AC)) respectively. VIH(AC), and VDDQ values defined in SSTL _18. VIH(AC) − VIL(AC) I(VIH(AC)) − I(VIL(AC)) Rtt(eff) = Measurement Definition for ∆VM Measure voltage (VM) at test pin (midpoint) with no load. 2 × VM VDDQ ∆VM = × 100% − 1 OCD Default Characteristics (TC = 0 to +85 °C, VDD, VDDQ = 1.85V ± 0.05V) (DDR2 SDRAM Component Specification) Parameter min. typ. max. Unit Notes Output impedance 12.6 18 23.4 Ω 1 Pull-up and pull-down mismatch 0 4 Ω 1, 2 Output slew rate 1.5 4.5 V/ns 3, 4 Notes: 1. Impedance measurement condition for output source DC current: VDDQ = 1.7V; VOUT = 1420mV; (VOUT −VDDQ)/IOH must be less than 23.4Ω for values of VOUT between VDDQ and VDDQ−280mV. Impedance measurement condition for output sink DC current: VDDQ = 1.7V; VOUT = 280mV; VOUT/IOL must be less than 23.4 Ω for values of VOUT between 0V and 280mV. 2. Mismatch is absolute value between pull up and pull down, both are measured at same temperature and voltage. 3. Slew rate measured from VIL(AC) to VIH(AC). 4. The absolute value of the slew rate as measured from DC to DC is equal to or greater than the slew rate as measured from AC to AC. This is guaranteed by design and characterization. Pin Capacitance (TA = 25°C, VDD = 1.85V ± 0.05V) Parameter Symbol Pins max. Unit Note Input capacitance CI1 Address, /RAS, /CAS, /WE, /CS, CKE, ODT TBD pF Input capacitance CI2 CK, /CK TBD pF Data and DQS input/output capacitance CO DQ, DQS, /DQS, DM TBD pF |
类似零件编号 - EBE51UD8ABFV-BE-E |
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类似说明 - EBE51UD8ABFV-BE-E |
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