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EBE51UD8AGWA-6E-E 数据表(PDF) 18 Page - Elpida Memory |
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EBE51UD8AGWA-6E-E 数据表(HTML) 18 Page - Elpida Memory |
18 / 25 page EBE51UD8AGWA Preliminary Data Sheet E0921E10 (Ver. 1.0) 18 AC Characteristics (TC = 0 °C to +85°C, VDD, VDDQ = 1.8V ± 0.1V, VSS, VSSQ = 0V) [DDR2 533] (DDR2 SDRAM Component Specification) -5C Frequency (Mbps) 533 Parameter Symbol min. max. Unit Notes /CAS latency CL 4 5 tCK Active to read or write command delay tRCD 15 ns Precharge command period tRP 15 ns Active to active/auto refresh command time tRC 60 ns DQ output access time from CK, /CK tAC −500 +500 ps DQS output access time from CK, /CK tDQSCK −450 +450 ps CK high-level width tCH 0.45 0.55 tCK CK low-level width tCL 0.45 0.55 tCK CK half period tHP min. (tCL, tCH) ps Clock cycle time tCK 3750 8000 ps DQ and DM input hold time (differential strobe) tDH (base) 225 ps 5 DQ and DM input hold time (single-ended strobe) tDH1 (base) –25 ps DQ and DM input setup time (differential strobe) tDS (base) 100 ps 4 DQ and DM input setup time (single-ended strobe) tDS1 (base) –25 ps Control and Address input pulse width for each input tIPW 0.6 tCK DQ and DM input pulse width for each input tDIPW 0.35 tCK Data-out high-impedance time from CK,/CK tHZ tAC max. ps Data-out low-impedance time from CK,/CK tLZ tAC min. tAC max. ps DQS-DQ skew for DQS and associated DQ signals tDQSQ 300 ps DQ hold skew factor tQHS 400 ps DQ/DQS output hold time from DQS tQH tHP – tQHS ps DQS latching rising transitions to associated clock edges tDQSS −0.25 +0.25 tCK DQS input high pulse width tDQSH 0.35 tCK DQS input low pulse width tDQSL 0.35 tCK DQS falling edge to CK setup time tDSS 0.2 tCK DQS falling edge hold time from CK tDSH 0.2 tCK Mode register set command cycle time tMRD 2 tCK Write postamble tWPST 0.4 0.6 tCK Write preamble tWPRE 0.35 tCK Address and control input hold time tIH (base) 375 ps 5 Address and control input setup time tIS (base) 250 ps 4 Read preamble tRPRE 0.9 1.1 tCK Read postamble tRPST 0.4 0.6 tCK Active to precharge command tRAS 45 70000 ns Active to auto-precharge delay tRAP tRCD min. ns Active bank A to active bank B command period tRRD 7.5 ns |
类似零件编号 - EBE51UD8AGWA-6E-E |
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类似说明 - EBE51UD8AGWA-6E-E |
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