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TPCF8402 数据表(PDF) 4 Page - Toshiba Semiconductor |
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TPCF8402 数据表(HTML) 4 Page - Toshiba Semiconductor |
4 / 11 page TPCF8402 2009-09-29 4 N-channel Electrical Characteristics (Ta = 25°C) Characteristics Symbol Test Condition Min Typ. Max Unit Gate leakage current IGSS VGS = ±16 V, VDS = 0 V ⎯ ⎯ ±10 μA Drain cut-off current IDSS VDS = 30 V, VGS = 0 V ⎯ ⎯ 10 μA V (BR) DSS ID = 10 mA, VGS = 0 V 30 ⎯ ⎯ Drain-source breakdown voltage V (BR) DSX ID = 10 mA, VGS = −20 V 15 ⎯ ⎯ V Gate threshold voltage Vth VDS = 10 V, ID = 1 mA 1.3 ⎯ 2.5 V VGS = 4.5 V, ID = 2.0 A ⎯ 58 77 Drain-source ON resistance RDS (ON) VGS = 10 V, ID = 2.0 A ⎯ 38 50 mΩ Forward transfer admittance |Yfs| VDS = 10 V, ID = 2.0 A 3.4 6.8 ⎯ S Input capacitance Ciss ⎯ 470 ⎯ Reverse transfer capacitance Crss ⎯ 60 ⎯ Output capacitance Coss VDS = 10 V, VGS = 0 V, f = 1 MHz ⎯ 80 ⎯ pF Rise time tr ⎯ 5.2 ⎯ Turn-on time ton ⎯ 8.3 ⎯ Fall time tf ⎯ 4.0 ⎯ Switching time Turn-off time toff Duty ≤ 1%, tw = 10 μs ⎯ 22 ⎯ ns Total gate charge (gate-source plus gate-drain) Qg ⎯ 10 ⎯ Gate-source charge 1 Qgs1 ⎯ 1.7 ⎯ Gate-drain (“miller”) charge Qgd VDD ≈ 24 V, VGS = 10 V, ID = 6 A ⎯ 2.4 ⎯ nC Source−Drain Ratings and Characteristics (Ta = 25°C) Characteristics Symbol Test Condition Min Typ. Max Unit Drain reverse current Pulse (Note 1) IDRP ⎯ ⎯ ⎯ 16.0 A Forward voltage (diode) VDSF IDR = 4.0 A, VGS = 0 V ⎯ ⎯ −1.2 V VDD ∼− 15 V 0 V VGS 10 V ID = 2.0 A VOUT |
类似零件编号 - TPCF8402 |
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类似说明 - TPCF8402 |
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