TPC8025 datasheet(1/7 Pages) TOSHIBA

部件名	TPC8025

功能描述	Field Effect Transistor Silicon N Channel MOS Type (U-MOS IV)

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制造商	TOSHIBA [Toshiba Semiconductor]

网页	http://www.semicon.toshiba.co.jp/eng

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TPC8025

2009-09-29

1

TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOS IV)

TPC8025

Lithium-Ion Battery Applications

Portable Equipment Applications

Notebook PC Applications

• Small footprint due to a small and thin package

• Low drain-source ON-resistance: RDS (ON) = 7.5 mΩ (typ.)

• High forward transfer admittance: |Yfs| = 26 S (typ.)

• Low leakage current: IDSS = 10 μA (max) (VDS = 30 V)

• Enhancement mode: Vth = 1.3 to 2.5 V (VDS = 10 V, ID = 1 mA)

Absolute Maximum Ratings (Ta = 25°C)

Characteristics

Symbol

Rating

Unit

Drain-source voltage

VDSS

30

V

Drain-gate voltage (RGS = 20 kΩ)

VDGR

30

V

Gate-source voltage

VGSS

±20

V

DC

(Note 1)

ID

11

Drain current

Pulse (Note 1)

IDP

44

A

Drain power dissipation

(t

= 10 s)

(Note 2a)

PD

1.9

W

Drain power dissipation

(t

= 10 s)

(Note 2b)

PD

1.0

W

Single pulse avalanche energy

(Note 3)

EAS

31

mJ

Avalanche current

IAR

11

A

Repetitive avalanche energy

(Note 2a) (Note 4)

EAR

0.053

mJ

Channel temperature

Tch

150

°C

Storage temperature range

Tstg

−55 to 150

°C

Note: For Notes 1 to 4, refer to the next page.

Using continuously under heavy loads (e.g. the application of high

temperature/current/voltage and the significant change in

temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating

conditions (i.e. operating temperature/current/voltage, etc.)

are within the absolute maximum ratings.

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook

(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test

report and estimated failure rate, etc).

This transistor is an electrostatic-sensitive device. Handle with care.

Unit: mm

JEDEC

―

JEITA

―

TOSHIBA

2-6J1B

Weight: 0.08 g (typ.)

Circuit Configuration

8

6

1

2

3

7

5

4

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TPC8025 数据表(PDF) 1 Page - Toshiba Semiconductor

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类似零件编号 - TPC8025

类似说明 - TPC8025

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TPC8025 数据表(PDF) 1 Page - Toshiba Semiconductor

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类似零件编号 - TPC8025

类似说明 - TPC8025

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