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2SK1381 Datasheet(数据表) 1 Page - Toshiba Semiconductor

部件型号  2SK1381
说明  Field Effect Transistor Silicon N Channel MOS Type (L2−pai-MOSIII) Relay Drive, Motor Drive and DC−DC Converter
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制造商  TOSHIBA [Toshiba Semiconductor]
网页  http://www.semicon.toshiba.co.jp/eng
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2SK1381 Datasheet(HTML) 1 Page - Toshiba Semiconductor

   
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2SK1381
2002-09-02
1
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (L2−π−MOSIII)
2SK1381
Relay Drive, Motor Drive and DC−DC Converter
Applications
4 V gate drive
Low drain−source ON resistance
: RDS (ON) = 25 mΩ (typ.)
High forward transfer admittance
: |Yfs| = 33 S (typ.)
Low leakage current
: IDSS = 100 µA (max) (VDS = 100 V)
Enhancement−mode
: Vth = 0.8~2.0 V (VDS = 10 V, ID = 1 mA)
Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Drain−source voltage
VDSS
100
V
Drain−gate voltage (RGS = 20 kΩ)
VDGR
100
V
Gate−source voltage
VGSS
±20
V
DC
(Note 1)
ID
50
Drain current
Pulse (Note 1)
IDP
200
A
Drain power dissipation (Tc = 25°C)
PD
150
W
Channel temperature
Tch
150
°C
Storage temperature range
Tstg
−55~150
°C
Thermal Characteristics
Characteristics
Symbol
Max
Unit
Thermal resistance, channel to case
Rth (ch−c)
0.833
°C / W
Thermal resistance, channel to
ambient
Rth (ch−a)
50
°C / W
Note 1: Please use devices on condition that the channel temperature is below 150°C.
This transistor is an electrostatic sensitive device.
Please handle with caution.
Unit: mm
1. GATE
2. DRAIN (HEAT SINK)
3. SOURCE
JEDEC
JEITA
TOSHIBA
2-16C1B
Weight: 4.6 g (typ.)




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