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FDS6688AS 数据表(PDF) 3 Page - Fairchild Semiconductor |
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FDS6688AS 数据表(HTML) 3 Page - Fairchild Semiconductor |
3 / 8 page FDS6688AS Rev C Electrical Characteristics T A = 25°C unless otherwise noted Symbol Parameter Test Conditions Min Typ Max Units Drain–Source Diode Characteristics and Maximum Ratings VSD Drain–Source Diode Forward Voltage VGS = 0 V, IS = 3.5 A (Note 2) VGS = 0 V, IS = 7 A (Note 2) 0.4 0.5 0.7 V trr Diode Reverse Recovery Time 27 nS IRM Diode Reverse Recovery Current 1.9 A Qrr Diode Reverse Recovery Charge IF = 14.5A, diF/dt = 300 A/µs (Note 3) 26 nC Notes: 1. RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RθJC is guaranteed by design while RθCA is determined by the user's board design. a) 50°/W when mounted on a 1 in 2 pad of 2 oz copper b) 105°/W when mounted on a .04 in 2 pad of 2 oz copper |
类似零件编号 - FDS6688AS |
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类似说明 - FDS6688AS |
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