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STC4516S8TG 数据表(PDF) 2 Page - Stanson Technology |
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STC4516S8TG 数据表(HTML) 2 Page - Stanson Technology |
2 / 9 page STC4516 Complementary Dual Enhancement Mode MOSFET 8.5A for N Channel / -7.2A for P Channl STANSON TECHNOLOGY 120 Bentley Square, Mountain View, Ca 94040 USA http://www.stansontech.com STC4516 2008 V1 ABSOULTE MAXIMUM RATINGS (Ta = 25℃ unless otherwise noted ) P-Channel Parameter Symbol Typical Unit Drain-Source Voltage VDSS -30 V Gate-Source Voltage VGSS +/-20 V Continuous Drain Current TA=25℃ TA=70℃ ID -7.2 -5.6 A Pulsed Drain Current IDM -20 A Continuous Source Current (Diode Conduction) IS -2.3 A Power Dissipation TA=25℃ TA=70℃ PD 2.8 1.8 W Operation Junction Temperature TJ -55/150 ℃ Storage Temperature Range TSTG -55/150 ℃ Thermal Resistance-Junction to Ambient RθJA 80 /W ℃ N-Channel Parameter Symbol Typical Unit Drain-Source Voltage VDSS 30 V Gate-Source Voltage VGSS +/-20 V Continuous Drain Current TA=25℃ TA=70℃ ID 8.5 7.5 A Pulsed Drain Current IDM 20 A Continuous Source Current (Diode Conduction) IS 2.3 A Power Dissipation TA=25℃ TA=100℃ PD 2.5 1.6 W Operation Junction Temperature TJ -55/150 ℃ Storage Temperature Range TSTG -55/150 ℃ Thermal Resistance-Junction to Ambient RθJA 80 /W ℃ |
类似零件编号 - STC4516S8TG |
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类似说明 - STC4516S8TG |
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