数据搜索系统,热门电子元器件搜索
  Chinese  ▼
ALLDATASHEETCN.COM

X  

BU323A 数据表(PDF) 4 Page - Motorola, Inc

部件名 BU323A
功能描述  16 AMPERE PEAK POWER TRANSISTOR DARLINGTON NPN SILICON 400 VOLTS 175 WATTS
Download  6 Pages
Scroll/Zoom Zoom In 100%  Zoom Out
制造商  MOTOROLA [Motorola, Inc]
网页  http://www.freescale.com
标志 MOTOROLA - Motorola, Inc

BU323A 数据表(HTML) 4 Page - Motorola, Inc

  BU323A Datasheet HTML 1Page - Motorola, Inc BU323A Datasheet HTML 2Page - Motorola, Inc BU323A Datasheet HTML 3Page - Motorola, Inc BU323A Datasheet HTML 4Page - Motorola, Inc BU323A Datasheet HTML 5Page - Motorola, Inc BU323A Datasheet HTML 6Page - Motorola, Inc  
Zoom Inzoom in Zoom Outzoom out
 4 / 6 page
background image
BU323A
3–234
Motorola Bipolar Power Transistor Device Data
Figure 9. Thermal Response
t, TIME (ms)
1
0.01
0.01
0.5
0.2
0.1
0.05
0.02
0.05
1
2
5
10
20
50
100
200
2000
500
R
θJC(t) = r(t) RθJC
R
θJC = °C/W MAX
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t1
TJ(pk) – TC = P(pk) R
θJC(t)
P(pk)
t1
t2
DUTY CYCLE, D = t1/t2
D = 0.5
0.2
0.05
0.01
SINGLE PULSE
0.1
0.7
0.3
0.07
0.03
0.02
0.1
0.5
0.2
1000
0.02
50
5
Figure 10. Forward Bias Safe Operating Area
VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS)
20
10
5
1
0.005
30
70
BONDING WIRE LIMIT
THERMAL LIMIT (SINGLE PULSE)
SECOND BREAKDOWN LIMIT
dc
100
µs
0.2
0.01
10
20
5.0 ms
1.0 ms
100
200 300
500
2
0.1
50
TC = 25°C
There are two limitations on the power handling ability of a
transistor: average junction temperature and second break-
down. Safe operating area curves indicate IC – VCE limits of
the transistor that must be observed for reliable operation,
i.e., the transistor must not be subjected to greater dissipa-
tion than the curves indicate.
The data of Figure 10 is based on TC = 25_C; TJ(pk) is
variable depending on power level. Second breakdown pulse
limits are valid for duty cycles to 10% but must be derated
when TC ≥ 25_C. Second breakdown limitations do not der-
ate the same as thermal limitations. Allowable current at the
voltages shown on Figure 10 may be found at any case tem-
perature by using the appropriate curve on Figure 11.
TJ(pk) may be calculated from the data in Figure 11. At high
case temperatures, thermal limitations will reduce the power
that can be handled to values less than the limitations im-
posed by second breakdown.
100
0
Figure 11. Power Derating
TC, CASE TEMPERATURE (°C)
80
0
80
120
40
20
40
160
200
60
THERMAL
DERATING
SECOND BREAKDOWN
DERATING
Figure 12. Ignition Test Circuit
0 Vdc
t1
50 ms
≈ 1K
≈ 30
B
470
VCC = 16 Vdc
1N4001
BC337
47
VZ
C
E
TUT
2.2
0.22
µF
100
1N4001
<1
11 mH
INDUCTIVE LOAD
t1 to be selected such that IC reaches 10 Adc before switch–off.
NOTE: Figure 12 specifies energy handling capabilities in an automotive ignition circuit.
VZ = 400 V (BU323A)
at IZ = 20 mA


类似零件编号 - BU323A

制造商部件名数据表功能描述
logo
GE Solid State
BU323A GESS-BU323A Datasheet
222Kb / 4P
   10-Ampere N-P-N Monolithic Darlington Power Transistors
logo
Inchange Semiconductor ...
BU323A ISC-BU323A Datasheet
82Kb / 2P
   isc Silicon NPN Power Transistor
logo
Savantic, Inc.
BU323A SAVANTIC-BU323A Datasheet
118Kb / 3P
   Silicon NPN Power Transistors
logo
Seme LAB
BU323A SEME-LAB-BU323A Datasheet
15Kb / 1P
   Bipolar NPN Device in a Hermetically sealed TO3
logo
Savantic, Inc.
BU323A SAVANTIC-BU323A Datasheet
120Kb / 3P
   Silicon NPN Power Transistors
More results

类似说明 - BU323A

制造商部件名数据表功能描述
logo
Motorola, Inc
MJ10005 MOTOROLA-MJ10005 Datasheet
229Kb / 8P
   20 AMPERE NPN SILICON POWER DARLINGTON TRANSISTORS 400 VOLTS 175 WATTS
MJ10012 MOTOROLA-MJ10012 Datasheet
191Kb / 6P
   10 AMPERE POWER TRANSISTORS DARLINGTON NPN SILICON 400 VOLTS 175 AND 118 WATTS
MJ10000 MOTOROLA-MJ10000 Datasheet
212Kb / 8P
   20 AMPERE NPN SILICON POWER DARLINGTON TRANSISTORS 350 VOLTS 175 WATTS
BU323AP MOTOROLA-BU323AP Datasheet
218Kb / 6P
   DARLINGTON NPN SILICON POWER TRANSISTOR 400 VOLTS 125 WATTS
MJ13333 MOTOROLA-MJ13333 Datasheet
278Kb / 8P
   20 AMPERE NPN SILICON POWER TRANSISTORS 400-500 VOLTS 175 WATTS
logo
ON Semiconductor
BU323AP ONSEMI-BU323AP Datasheet
201Kb / 6P
   DARLINGTON NPN SILICON POWER TRANSISTOR 400 VOLTS 125 WATTS
1996 REV 8
logo
Motorola, Inc
MJ10007 MOTOROLA-MJ10007 Datasheet
228Kb / 8P
   10 AMPERE NPN SILICON POWER DARLINGTON TRANSISTORS 400 VOLTS 150 WATTS
logo
ON Semiconductor
MJE13005 ONSEMI-MJE13005_06 Datasheet
105Kb / 7P
   4 AMPERE NPN SILICON POWER TRANSISTOR 400 VOLTS ??75 WATTS
February, 2006 ??Rev. 7
MJE13009 ONSEMI-MJE13009_06 Datasheet
148Kb / 10P
   12 AMPERE NPN SILICON POWER TRANSISTOR 400 VOLTS ??100 WATTS
February, 2006 ??Rev. 7
logo
Motorola, Inc
MJE13005 MOTOROLA-MJE13005 Datasheet
311Kb / 8P
   4 AMPERE NPN SILICON POWER TRANSISTOR 400 VOLTS 75 WATTS
More results


Html Pages

1 2 3 4 5 6


数据表 下载

Go To PDF Page


链接网址




隐私政策
ALLDATASHEETCN.COM
ALLDATASHEET是否为您带来帮助?  [ DONATE ] 

关于 Alldatasheet   |   广告服务   |   联系我们   |   隐私政策   |   链接交换   |   制造商名单
All Rights Reserved©Alldatasheet.com


Mirror Sites
English : Alldatasheet.com  |   English : Alldatasheet.net  |   Chinese : Alldatasheetcn.com  |   German : Alldatasheetde.com  |   Japanese : Alldatasheet.jp
Russian : Alldatasheetru.com  |   Korean : Alldatasheet.co.kr  |   Spanish : Alldatasheet.es  |   French : Alldatasheet.fr  |   Italian : Alldatasheetit.com
Portuguese : Alldatasheetpt.com  |   Polish : Alldatasheet.pl  |   Vietnamese : Alldatasheet.vn
Indian : Alldatasheet.in  |   Mexican : Alldatasheet.com.mx  |   British : Alldatasheet.co.uk  |   New Zealand : Alldatasheet.co.nz
Family Site : ic2ic.com  |   icmetro.com