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KF13N50P 数据表(PDF) 1 Page - KEC(Korea Electronics) |
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KF13N50P 数据表(HTML) 1 Page - KEC(Korea Electronics) |
1 / 7 page 2008. 10. 2 1/7 SEMICONDUCTOR TECHNICAL DATA KF13N50P/F N CHANNEL MOS FIELD EFFECT TRANSISTOR Revision No : 1 General Description This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for electronic ballast and switching mode power supplies. FEATURES ・V DSS= 500V, ID= 13A ・Drain-Source ON Resistance : RDS(ON)=0.44Ω(Max) @VGS = 10V ・Qg(typ.) = 35nC MAXIMUM RATING (Tc=25℃) DIM MILLIMETERS TO-220AB 1.46 A B C D E F G H J K M N O 0.8 0.1 + _ 2.8 0.1 + _ 2.54 0.2 + _ 1.27 0.1 + _ 1.4 0.1 + _ 13.08 0.3 + _ 3.6 0.2 + _ + _ 9.9 0.2 + _ 9.2 0.2 + _ 4.5 0.2 + _ 2.4 0.2 15.95 MAX 1.3+0.1/-0.05 0.5+0.1/-0.05 3.7 1.5 A F B J G K M L L E I I O C H NN Q D Q P P 1. GATE 2. DRAIN 3. SOURCE 12 3 * : Drain current limited by maximum junction temperature. G D S TO-220IS (1) A A B C C D D E E F G H H 1.47 MAX 1.47 MAX J K L M L N NN O Q R R 12 3 M DIM MILLIMETERS 10.16 0.2 + _ 15.87 0.2 + _ 2.54 0.2 + _ 0.8 0.1 + _ 3.18 0.1 + _ 0.5 0.1 + _ 3.23 0.1 + _ 13.0 0.5 + _ 2.54 0.2 + _ 4.7 0.2 + _ 6.68 0.2 + _ 2.76 0.2 + _ 3.3 0.1 + _ 12.57 0.2 + _ 1. GATE 2. DRAIN 3. SOURCE CHARACTERISTIC SYMBOL RATING UNIT KF13N50P KF13N50F Drain-Source Voltage VDSS 500 V Gate-Source Voltage VGSS ±30 V Drain Current @TC=25℃ ID 13 13* A @TC=100℃ 8 8* Pulsed (Note1) IDP 40 40* Single Pulsed Avalanche Energy (Note 2) EAS 860 mJ Repetitive Avalanche Energy (Note 1) EAR 19.5 mJ Peak Diode Recovery dv/dt (Note 3) dv/dt 4.5 V/ns Drain Power Dissipation Tc=25℃ PD 208 49.8 W Derate above 25℃ 1.66 0.4 W/℃ Maximum Junction Temperature Tj 150 ℃ Storage Temperature Range Tstg -55~150 ℃ Thermal Characteristics Thermal Resistance, Junction-to-Case RthJC 0.6 2.51 ℃/W Thermal Resistance, Junction-to- Ambient RthJA 62.5 62.5 ℃/W KF13N50F KF13N50P EQUIVALENT CIRCUIT |
类似零件编号 - KF13N50P |
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类似说明 - KF13N50P |
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