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BSP52T1 Datasheet(数据表) 2 Page - Motorola, Inc

部件型号  BSP52T1
说明  MEDIUM POWER NPN SILICON DARLINGTON TRANSISTOR SURFACE MOUNT
下载  6 Pages
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制造商  MOTOROLA [Motorola, Inc]
网页  http://www.freescale.com
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BSP52T1 Datasheet(HTML) 2 Page - Motorola, Inc

   
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BSP52T1
2
Motorola Small–Signal Transistors, FETs and Diodes Device Data
ELECTRICAL CHARACTERISTICS (continued) (TA = 25°C unless otherwise noted)
Characteristics
Symbol
Min
Max
Unit
OFF CHARACTERISTICS
Collector-Base Breakdown Voltage
(IC = 100 µAdc, IE = 0)
V(BR)CBO
90
Vdc
Emitter-Base Breakdown Voltage
(IE = 10 µAdc, IC = 0)
V(BR)EBO
5.0
Vdc
Collector-Emitter Cutoff Current
(VCE = 80 Vdc, VBE = 0)
ICES
10
µAdc
Emitter-Base Cutoff Current
(VEB = 4.0 Vdc, IC = 0)
IEBO
10
µAdc
ON CHARACTERISTICS (2)
DC Current Gain
(IC = 150 mAdc, VCE = 10 Vdc)
(IC = 500 mAdc, VCE = 10 Vdc)
hFE
1000
2000
Collector-Emitter Saturation Voltage
(IC = 500 mAdc, IB = 0.5 mAdc)
VCE(sat)
1.3
Vdc
Base-Emitter On Voltage
(IC = 500 mAdc, IB = 0.5 mAdc)
VBE(on)
1.9
Vdc
2. Pulse Test: Pulse Width
≤ 300 µs, Duty Cycle ≤ 2.0%




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