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BU2527AF 数据表(PDF) 2 Page - Quanzhou Jinmei Electronic Co.,Ltd. |
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BU2527AF 数据表(HTML) 2 Page - Quanzhou Jinmei Electronic Co.,Ltd. |
2 / 3 page ![]() Product Specification www.jmnic.com JMnic Silicon NPN Power Transistors BU2527AF CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT VCEO(SUS) Collector-emitter sustaining voltage IC=100mA ;IB=0,L=25mH 800 V VEBO Emitter-base breakdown voltage IE=1mA ;IC=0 7.5 V VCEsat Collector-emitter saturation voltage IC=6A ;IB=1.2A 5.0 V VBEsat Emitter-base saturation voltage IC=6A ;IB=1.2A 1.3 V ICES Collector cut-off current VCE=BVCES; VBE=0 TC=125℃ 0.25 2.0 mA IEBO Emitter cut-off current VEB=7.5V; IC=0 0.25 mA hFE-1 DC current gain IC=1A ; VCE=5V 10 hFE-2 DC current gain IC=6A ; VCE=5V 5 9 |
类似零件编号 - BU2527AF |
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类似说明 - BU2527AF |
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