2SD1294 datasheet(2/3 Pages) JMNIC

部件名	2SD1294

功能描述	Silicon Power Transistors

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制造商	JMNIC [Quanzhou Jinmei Electronic Co.,Ltd.]

网页	http://www.jmnic.com

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2 / 3 page

Product Specification

www.jmnic.com

JMnic

Silicon Power Transistors

2SD1294

CHARACTERISTICS

Tj=25℃ unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

MIN

TYP.

MAX

UNIT

VCEO

Collector-emitter breakdown voltage

IC=100mA ;IB=0

45

75

V

VCBO

Collector-base breakdown voltage

IC=100mA ;IE=0

45

75

V

VCEsat-1

Collector-emitter saturation voltage

IC=0.5A ;IB=1mA

1.5

V

VCEsat-2

Collector-emitter saturation voltage

IC=1A; IB=1mA

2.5

V

VBE

Emitter-base on voltage

IC=0.5A;VCE=5V

1.8

V

IEBO

Emitter cut-off current

VEB=6V; IC=0

0.1

mA

hFE

DC current gain

IC=0.5A ; VCE=5V

2000

20000

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